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Results:
1-8
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Results: 8
Authors:
Brill, G
Velicu, S
Boieriu, P
Chen, Y
Dhar, NK
Lee, TS
Selamet, Y
Sivananthan, S
Citation: G. Brill et al., MBE growth and device processing of MWIR HgCdTe on large area Si substrates, J ELEC MAT, 30(6), 2001, pp. 717-722
Authors:
Dhar, NK
Goldsman, N
Wood, CEC
Citation: Nk. Dhar et al., Tellurium desorption kinetics from (112) Si: Si-Te binding energy, PHYS REV B, 61(12), 2000, pp. 8256-8261
Authors:
Ashokan, R
Dhar, NK
Yang, B
Akhiyat, A
Lee, TS
Rujirawat, S
Yousuf, S
Sivananthan, S
Citation: R. Ashokan et al., Variable area MWIR diodes on HgCdTe/Si grown by molecular beam epitaxy, J ELEC MAT, 29(6), 2000, pp. 636-640
Authors:
Dhar, NK
Boyd, PR
Martinka, M
Dinan, JH
Almeida, LA
Goldsman, N
Citation: Nk. Dhar et al., CdZnTe heteroepitaxy on 3-inch (112) Si: Interface, surface, and layer characteristics, J ELEC MAT, 29(6), 2000, pp. 748-753
Authors:
Almeida, LA
Dhar, NK
Martinka, M
Dinan, JH
Citation: La. Almeida et al., HgCdTe heteroepitaxy on three-inch (112) CdZnTe/Si: Ellipsometric control of substrate temperature, J ELEC MAT, 29(6), 2000, pp. 754-759
Authors:
Sporken, R
Grajewski, D
Xin, Y
Wiame, F
Brill, G
Boieriu, P
Prociuk, A
Rujirawat, S
Dhar, NK
Sivananthan, S
Citation: R. Sporken et al., Selective epitaxy of cadmium telluride on silicon by MBE, J ELEC MAT, 29(6), 2000, pp. 760-764
Authors:
Dhar, NK
Zanatta, JP
Ferret, P
Million, A
Citation: Nk. Dhar et al., Characteristics of HgCdTe CdTe hetero-epitaxial system and mid-wave diodeson 2 inch silicon, J CRYST GR, 202, 1999, pp. 975-979
Authors:
Xin, Y
Rujirawat, S
Browning, ND
Sporken, R
Sivananthan, S
Pennycook, SJ
Dhar, NK
Citation: Y. Xin et al., The effect of As passivation on the molecular beam epitaxial growth of high-quality single-domain CdTe(111)B on Si(111) substrates, APPL PHYS L, 75(3), 1999, pp. 349-351
Risultati:
1-8
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