Authors:
Wahab, Q
Ellison, A
Henry, A
Janzen, E
Hallin, C
Di Persio, J
Martinez, R
Citation: Q. Wahab et al., Influence of epitaxial growth and substrate-induced defects on the breakdown of 4H-SiC Schottky diodes, APPL PHYS L, 76(19), 2000, pp. 2725-2727
Authors:
Verfaillie, CM
Ploemacher, R
Di Persio, J
Sutherland, R
Serke, S
Johnsen, H
Noga, S
Negrin, R
Citation: Cm. Verfaillie et al., ISHAGE Scientific Committee Report - Assays to determine hematopoietic stem cell content in blood or marrow grafts, CYTOTHERAPY, 1(1), 1999, pp. 41-49
Authors:
Huet, F
Di Forte-Poisson, MA
Calligaro, M
Olivier, J
Wyczisk, F
Di Persio, J
Citation: F. Huet et al., The behavior of Ni/Au contacts under rapid thermal annealing in GaN devicestructures, J ELEC MAT, 28(12), 1999, pp. 1440-1443
Authors:
di Forte-Poisson, MA
Huet, F
Romann, A
Tordjman, M
Lancefield, D
Pereira, E
Di Persio, J
Pecz, B
Citation: Ma. Di Forte-poisson et al., Relationship between physical properties and gas purification in GaN grownby metalorganic vapor phase epitaxy, J CRYST GR, 195(1-4), 1998, pp. 314-318