Citation: A. Paskaleva et al., Leakage currents and conduction mechanisms of Ta2O5 layers on Si obtained by RF sputtering, VACUUM, 58(2-3), 2000, pp. 470-477
Authors:
Novkovski, N
Pecovska-Gjorgjevich, M
Atanassova, E
Dimitrova, T
Citation: N. Novkovski et al., Stress degradation of low field leakage in alumina gate MOS structures containing RF magnetron sputtered thin Ta2O5 films on silicon, PHYS ST S-A, 172(2), 1999, pp. R9-R10