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Results:
1-8
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Results: 8
Authors:
Dimroth, F
Beckert, R
Meusel, M
Schubert, U
Bett, AW
Citation: F. Dimroth et al., Metamorphic GayIn1-yP/Ga1-xInxAs tandem solar cells for space and for terrestrial concentrator applications at C > 1000 suns, PROG PHOTOV, 9(3), 2001, pp. 165-178
Authors:
Bett, AW
Adelhelm, R
Agert, C
Beckert, R
Dimroth, F
Schubert, U
Citation: Aw. Bett et al., Advanced III-V solar cell structures grown by MOVPE, SOL EN MAT, 66(1-4), 2001, pp. 541-550
Authors:
Agert, C
Dimroth, F
Schubert, U
Bett, AW
Leu, S
Stolz, W
Citation: C. Agert et al., High-efficiency (AlGa)As/GaAs solar cells grown by MOVPE using TBAs at low-temperatures and low V/III-ratios, SOL EN MAT, 66(1-4), 2001, pp. 637-644
Authors:
Dimroth, F
Schubert, U
Bett, AW
Citation: F. Dimroth et al., 25.5% efficient Ga0.35In0.65P/Ga0.83In0.17 as tandem solar cells grown on GaAs substrates, IEEE ELEC D, 21(5), 2000, pp. 209-211
Authors:
Dimroth, F
Lanyi, P
Schubert, U
Bett, AW
Citation: F. Dimroth et al., MOVPE grown Ga1-xInxAs solar cells for GaInP/GaInAs tandem applications, J ELEC MAT, 29(1), 2000, pp. 42-46
Authors:
Dimroth, F
Schubert, U
Schienle, F
Bett, AW
Citation: F. Dimroth et al., High C-doping of MOVPE grown thin AlxGa1-xAs layers for AlGaAs/GaAs interband tunneling devices, J ELEC MAT, 29(1), 2000, pp. 47-52
Authors:
Smith, LM
Rushworth, SA
Ravetz, MS
Odedra, R
Kanjolia, R
Agert, C
Dimroth, F
Schubert, U
Bett, AW
Citation: Lm. Smith et al., Low oxygen content trimethylaluminium and trimethylindium for MOVPE of light emitting devices, J CRYST GR, 221, 2000, pp. 86-90
Authors:
Bett, AW
Dimroth, F
Stollwerck, G
Sulima, OV
Citation: Aw. Bett et al., III-V compounds for solar cell applications, APPL PHYS A, 69(2), 1999, pp. 119-129
Risultati:
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