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Results:
1-11
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Results: 11
Authors:
Tennant, WE
Thomas, M
Kozlowski, LJ
McLevige, WV
Edwall, DD
Zandian, M
Spariosu, K
Hildebrandt, G
Gil, V
Ely, P
Muzilla, M
Stoltz, A
Dinan, JH
Citation: We. Tennant et al., A novel simultaneous unipolar multispectral integrated technology approachfor HgCdTeIR detectors and focal plane arrays, J ELEC MAT, 30(6), 2001, pp. 590-594
Authors:
Almeida, LA
Hirsch, L
Martinka, M
Boyd, PR
Dinan, JH
Citation: La. Almeida et al., Improved morphology and crystalline quality of MBE CdZnTe/Si, J ELEC MAT, 30(6), 2001, pp. 608-610
Authors:
Martinka, M
Almeida, LA
Benson, JD
Dinan, JH
Citation: M. Martinka et al., Characterization of cross-hatch morphology of MBE (211) HgCdTe, J ELEC MAT, 30(6), 2001, pp. 632-636
Authors:
Stoltz, AJ
Banish, MR
Dinan, JH
Benson, JD
Brown, DR
Chenault, DB
Boyd, PR
Citation: Aj. Stoltz et al., Antireflective structures in CdTe and CdZnTe surfaces by ECR plasma etching, J ELEC MAT, 30(6), 2001, pp. 733-737
Authors:
Taylor, PJ
Jesser, WA
Benson, JD
Martinka, M
Dinan, JH
Bradshaw, J
Lara-Taysing, M
Leavitt, RP
Simonis, G
Chang, W
Clark, WW
Bertness, KA
Citation: Pj. Taylor et al., Optoelectronic device performance on reduced threading dislocation densityGaAs/Si, J APPL PHYS, 89(8), 2001, pp. 4365-4375
Authors:
Dhar, NK
Boyd, PR
Martinka, M
Dinan, JH
Almeida, LA
Goldsman, N
Citation: Nk. Dhar et al., CdZnTe heteroepitaxy on 3-inch (112) Si: Interface, surface, and layer characteristics, J ELEC MAT, 29(6), 2000, pp. 748-753
Authors:
Almeida, LA
Dhar, NK
Martinka, M
Dinan, JH
Citation: La. Almeida et al., HgCdTe heteroepitaxy on three-inch (112) CdZnTe/Si: Ellipsometric control of substrate temperature, J ELEC MAT, 29(6), 2000, pp. 754-759
Authors:
Taylor, PJ
Jesser, WA
Martinka, M
Singley, KM
Dinan, JH
Lareau, RT
Wood, MC
Clark, WW
Citation: Pj. Taylor et al., Reduced carbon contaminant, low-temperature silicon substrate preparation for "defect-free" homoepitaxy, J VAC SCI A, 17(4), 1999, pp. 1153-1159
Authors:
Johnson, JN
Almeida, LA
Martinka, M
Benson, JD
Dinan, JH
Citation: Jn. Johnson et al., Use of electron cyclotron resonance plasmas to prepare CdZnTe (211)B substrates for HgCdTe molecular beam epitaxy, J ELEC MAT, 28(6), 1999, pp. 817-820
Authors:
Almeida, LA
Dinan, JH
Citation: La. Almeida et Jh. Dinan, In situ compositional control of advanced HgCdTe-based IR detectors, J CRYST GR, 202, 1999, pp. 22-25
Authors:
Taylor, PJ
Jesser, WA
Martinka, M
Dinan, JH
Citation: Pj. Taylor et al., Epitaxial growth of stoichiometric (100) GaAs at 75 degrees C, J APPL PHYS, 85(7), 1999, pp. 3850-3854
Risultati:
1-11
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