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Results: 1-14 |
Results: 14
Corona discharge supersonic free-jet for III-V nitride growth via A (3)Sigma(+)(u) metastable nitrogen molecules
Authors: Jordan, DC Burns, CT Doak, RB
Citation: Dc. Jordan et al., Corona discharge supersonic free-jet for III-V nitride growth via A (3)Sigma(+)(u) metastable nitrogen molecules, J APPL PHYS, 89(2), 2001, pp. 883-892
Sufficient conditions for quantum reflection with real gas-surface interaction potentials
Authors: Doak, RB Chizmeshya, AVG
Citation: Rb. Doak et Avg. Chizmeshya, Sufficient conditions for quantum reflection with real gas-surface interaction potentials, ATOMIC AND MOLECULAR BEAMS: THE STATE OF THE ART 2000, 2001, pp. 175-182
Supersonic beam epitaxy of wide bandgap semiconductors
Authors: Torres, VM Jordan, DC Tsong, IST Doak, RB
Citation: Vm. Torres et al., Supersonic beam epitaxy of wide bandgap semiconductors, ATOMIC AND MOLECULAR BEAMS: THE STATE OF THE ART 2000, 2001, pp. 945-958
Sufficiency conditions for quantum reflection
Authors: Doak, RB Chizmeshya, AVG
Citation: Rb. Doak et Avg. Chizmeshya, Sufficiency conditions for quantum reflection, EUROPH LETT, 51(4), 2000, pp. 381-387
Morphological control of GaN buffer layers grown by molecular beam epitaxyon 6H-SiC(0001)
Authors: Hu, CW Smith, DJ Doak, RB Tsong, IST
Citation: Cw. Hu et al., Morphological control of GaN buffer layers grown by molecular beam epitaxyon 6H-SiC(0001), SURF REV L, 7(5-6), 2000, pp. 565-570
Nanostructuring of zone plates for helium atom beam focusing
Authors: Rehbein, S Doak, RB Grisenti, RE Schmahl, G Toennies, JP Woll, C
Citation: S. Rehbein et al., Nanostructuring of zone plates for helium atom beam focusing, MICROEL ENG, 53(1-4), 2000, pp. 685-688
III-N semiconductor growth with activated nitrogen: State-specific study of A(3)Sigma(+)(u) metastable N-2 molecules
Authors: Jordan, DC Tsong, IST Smith, DJ Wilkens, BJ Doak, RB
Citation: Dc. Jordan et al., III-N semiconductor growth with activated nitrogen: State-specific study of A(3)Sigma(+)(u) metastable N-2 molecules, APPL PHYS L, 77(19), 2000, pp. 3030-3032
Surface phonons and other localized excitations
Authors: Allen, PB Aubin, S Doak, RB
Citation: Pb. Allen et al., Surface phonons and other localized excitations, AM J PHYS, 68(3), 2000, pp. 228-231
Selected energy epitaxial deposition of GaN and AlN on SiC(0001) using seeded supersonic free jets of NH3 in helium
Authors: Torres, VM Doak, RB Wilkens, BJ Smith, DJ Tsong, IST
Citation: Vm. Torres et al., Selected energy epitaxial deposition of GaN and AlN on SiC(0001) using seeded supersonic free jets of NH3 in helium, J VAC SCI A, 17(4), 1999, pp. 1570-1576
Refractory graphite skimmers for supersonic free-jet, supersonic arc-jet, and plasma discharge applications
Authors: Jordan, DC Barling, R Doak, RB
Citation: Dc. Jordan et al., Refractory graphite skimmers for supersonic free-jet, supersonic arc-jet, and plasma discharge applications, REV SCI INS, 70(3), 1999, pp. 1640-1648
Towards realization of an atomic de Broglie microscope: Helium atom focusing using fresnel zone plates
Authors: Doak, RB Grisenti, RE Rehbein, S Schmahl, G Toennies, JP Woll, C
Citation: Rb. Doak et al., Towards realization of an atomic de Broglie microscope: Helium atom focusing using fresnel zone plates, PHYS REV L, 83(21), 1999, pp. 4229-4232
Homoepitaxial GaN layers studied by low-energy electron microscopy, atomicforce microscopy and transmission electron microscopy
Authors: Pavlovska, A Torres, VM Edwards, JL Bauer, E Smith, DJ Doak, RB Tsong, IST Thomson, DB Davis, RF
Citation: A. Pavlovska et al., Homoepitaxial GaN layers studied by low-energy electron microscopy, atomicforce microscopy and transmission electron microscopy, PHYS ST S-A, 176(1), 1999, pp. 469-473
Low-energy electron microscopy observations of GaN homoepitaxy using a supersonic jet source
Authors: Pavlovska, A Torres, VM Bauer, E Doak, RB Tsong, IST Thomson, DB Davis, RF
Citation: A. Pavlovska et al., Low-energy electron microscopy observations of GaN homoepitaxy using a supersonic jet source, APPL PHYS L, 75(7), 1999, pp. 989-991
Influence of 6H-SiC(0001) substrate surface morphology on the growth of AlN epitaxial layers
Authors: Torres, VM Edwards, JL Wilkens, BJ Smith, DJ Doak, RB Tsong, IST
Citation: Vm. Torres et al., Influence of 6H-SiC(0001) substrate surface morphology on the growth of AlN epitaxial layers, APPL PHYS L, 74(7), 1999, pp. 985-987
Risultati: 1-14 |