Authors: Zytkiewicz, ZR Domagala, J Dobosz, D

Citation: Zr. Zytkiewicz et al., Control of adhesion to the mask of epitaxial laterally overgrown GaAs layers, J APPL PHYS, 90(12), 2001, pp. 6140-6144

Authors: Zytkiewicz, ZR Dobosz, D Pawlowska, M

Citation: Zr. Zytkiewicz et al., Epitaxial lateral overgrowth of GaAs: effect of doping on LPE growth behaviour, SEMIC SCI T, 14(5), 1999, pp. 465-469

Authors: Domagala, J Bak-Misiuk, J Adamczewska, J Zytkiewicz, ZR Dynowska, E Trela, J Dobosz, D Janik, E Leszczynski, M

Citation: J. Domagala et al., Anisotropic misfit strain relaxation in thin epitaxial layers, PHYS ST S-A, 171(1), 1999, pp. 289-294

Authors: Rantamaki, R Tuomi, T Zytkiewicz, ZR Dobosz, D McNally, PJ

Citation: R. Rantamaki et al., Synchrotron x-ray topography analysis of GaAs layers grown on GaAs substrates by liquid phase epitaxial lateral overgrowth, J PHYS D, 32(10A), 1999, pp. A114-A118

Authors: Zytkiewicz, ZR Domagala, J Dobosz, D Bak-Misiuk, J

Citation: Zr. Zytkiewicz et al., Strain in GaAs layers grown by liquid phase epitaxial lateral overgrowth, J APPL PHYS, 86(4), 1999, pp. 1965-1969

Authors: Zytkiewicz, ZR Domagala, J Dobosz, D Bak-Misiuk, J

Citation: Zr. Zytkiewicz et al., Microscopic bending of GaAs layers grown by epitaxial lateral overgrowth, J APPL PHYS, 84(12), 1998, pp. 6937-6939