Authors:
Gebauer, J
Krause-Rehberg, R
Domke, C
Ebert, P
Urban, K
Staab, TEM
Citation: J. Gebauer et al., Direct identification of As vacancies in GaAs using positron annihilation calibrated by scanning tunneling microscopy - art. no. 045203, PHYS REV B, 6304(4), 2001, pp. 5203
Citation: P. Ebert et al., Direct observation of electrical charges at dislocations in GaAs by cross-sectional scanning tunneling microscopy, APPL PHYS L, 78(4), 2001, pp. 480-482
Authors:
Siemens, B
Domke, C
Heinrich, M
Ebert, P
Urban, K
Citation: B. Siemens et al., Imaging individual dopant atoms on cleavage surfaces of wurtzite-structurecompound semiconductors, PHYS REV B, 59(4), 1999, pp. 2995-2999
Citation: B. Siemens et al., Steps on CdSe (1120) and (1010) cleavage surfaces: Evidence for crack propagation in competing cleavage planes, PHYS REV B, 59(4), 1999, pp. 3000-3007
Citation: B. Siemens et al., Point defects, dopant atoms, and compensation effects in CdSe and CdS cleavage surfaces, THIN SOL FI, 344, 1999, pp. 537-540