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Results: 1-9 |
Results: 9

Authors: Mrosk, JW Berger, L Ettl, C Fecht, HJ Fischerauer, G Dommann, A
Citation: Jw. Mrosk et al., Materials issues of SAW sensors for high-temperature applications, IEEE IND E, 48(2), 2001, pp. 258-264

Authors: Perry, AJ Bull, SJ Dommann, A Michler, M Wood, BP Rafaja, D Matossian, JN
Citation: Aj. Perry et al., The smoothness, hardness and stress in titanium nitride following argon gas cluster ion beam treatment, SURF COAT, 140(2), 2001, pp. 99-108

Authors: Micheler, M Dommann, A
Citation: M. Micheler et A. Dommann, Nanohardness measurements for industrial applications, Z METALLKUN, 92(9), 2001, pp. 1035-1039

Authors: Rosenblad, C Kummer, M Dommann, A Muller, E Gusso, M Tapfer, L von Kanel, H
Citation: C. Rosenblad et al., Virtual substrates for the n- and p-type Si-MODFET grown at very high rates, MAT SCI E B, 74(1-3), 2000, pp. 113-117

Authors: Perry, AJ Bull, SJ Dommann, A Rafaja, D Wood, BP Michler, M
Citation: Aj. Perry et al., The surface damage in titanium nitride associated with lateral sputtering by argon cluster ions, SURF COAT, 133, 2000, pp. 253-258

Authors: Mukhamedzhanov, E Kummer, M Dommann, A
Citation: E. Mukhamedzhanov et al., Triple-crystal diffractometry, x-ray standing wave and reciprocal space mapping study of homoepitaxial grown Si layers, J PHYS D, 33(17), 2000, pp. 2087-2091

Authors: Rosenblad, C von Kanel, H Kummer, M Dommann, A Muller, E
Citation: C. Rosenblad et al., A plasma process for ultrafast deposition of SiGe graded buffer layers, APPL PHYS L, 76(4), 2000, pp. 427-429

Authors: Kacsich, T Gasser, S Tsuji, Y Dommann, A Nicolet, MA Nicolet, A
Citation: T. Kacsich et al., Wet oxidation of Ti34Si23B43, J APPL PHYS, 85(3), 1999, pp. 1871-1875

Authors: Mateeva, E Deller, HR Kafader, U Rosenblad, C Von Kanel, H Dommann, A
Citation: E. Mateeva et al., Epitaxial growth of Si by tow-energy DC-plasma chemical vapor deposition, J MAT SCI L, 17(18), 1998, pp. 1545-1547
Risultati: 1-9 |