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Results: 1-11 |
Results: 11
Emitter interface in InP-based HBTs with InAlAs/InP composite emitters
Authors: McKinnon, WR Driad, R Storey, C Renaud, A McAlister, SP Garanzotis, T Springthorpe, AJ
Citation: Wr. Mckinnon et al., Emitter interface in InP-based HBTs with InAlAs/InP composite emitters, IEICE TR EL, E84C(10), 2001, pp. 1373-1378
Effect of emitter design on the dc characteristics of InP-based double-heterojunction bipolar transistors
Authors: Driad, R McKinnon, WR McAlister, SP Garanzotis, T SpringThorpe, AJ
Citation: R. Driad et al., Effect of emitter design on the dc characteristics of InP-based double-heterojunction bipolar transistors, SEMIC SCI T, 16(3), 2001, pp. 171-175
Thermodynamics of GaNyAs1-y growth by metalorganic vapor phase epitaxy
Authors: Gupta, JA McKinnon, WR Noad, J Coulas, D Williams, RL Driad, R McAlister, SP
Citation: Ja. Gupta et al., Thermodynamics of GaNyAs1-y growth by metalorganic vapor phase epitaxy, J CRYST GR, 231(1-2), 2001, pp. 48-56
Interpretation of the common-emitter offset voltage in heterojunction bipolar transistors
Authors: McAlister, SP McKinnon, WR Driad, R
Citation: Sp. Mcalister et al., Interpretation of the common-emitter offset voltage in heterojunction bipolar transistors, IEEE DEVICE, 48(8), 2001, pp. 1745-1747
Oxygen plasma induced degradation in InGaAs/InP heterostructures
Authors: Driad, R McKinnon, WR McAlister, SP
Citation: R. Driad et al., Oxygen plasma induced degradation in InGaAs/InP heterostructures, J VAC SCI B, 18(6), 2000, pp. 2799-2802
Surface passivation of InGaAs for heterojunction bipolar transistor applications
Authors: Driad, R McKinnon, WR Lu, ZH McAlister, SP Poole, PJ Charbonneau, S
Citation: R. Driad et al., Surface passivation of InGaAs for heterojunction bipolar transistor applications, J VAC SCI A, 18(2), 2000, pp. 697-700
Effect of UV-ozone oxidation on the device characteristics of InP-based heterostructure bipolar transistors
Authors: Driad, R McKinnon, WR Lu, ZH McAlister, SP
Citation: R. Driad et al., Effect of UV-ozone oxidation on the device characteristics of InP-based heterostructure bipolar transistors, J ELEC MAT, 29(12), 2000, pp. L33-L36
Reduction of surface recombination in InGaAs/InP heterostructures using UV-irradiation and ozone
Authors: Driad, R Lu, ZH Laframboise, S Scansen, D McKinnon, WR McAlister, SP
Citation: R. Driad et al., Reduction of surface recombination in InGaAs/InP heterostructures using UV-irradiation and ozone, JPN J A P 1, 38(2B), 1999, pp. 1124-1127
Improved InGaAs/InP double-heterojunction bipolar transistors using a thin-emitter structure design
Authors: Driad, R McKinnon, WR Laframboise, S McAlister, SP
Citation: R. Driad et al., Improved InGaAs/InP double-heterojunction bipolar transistors using a thin-emitter structure design, MICROW OPT, 21(4), 1999, pp. 235-238
Passivation of InP-based HBTs
Authors: Driad, R Laframboise, SR Lu, ZH McAlister, SP McKinnon, WR
Citation: R. Driad et al., Passivation of InP-based HBTs, SOL ST ELEC, 43(8), 1999, pp. 1445-1450
Passivation of InGaAs surfaces and InGaAs/InP heterojunction bipolar transistors by sulfur treatment
Authors: Driad, R Lu, ZH Charbonneau, S McKinnon, WR Laframboise, S Poole, PJ McAlister, SP
Citation: R. Driad et al., Passivation of InGaAs surfaces and InGaAs/InP heterojunction bipolar transistors by sulfur treatment, APPL PHYS L, 73(5), 1999, pp. 665-667
Risultati: 1-11 |