Authors: Sankin, I Casady, JB Dufrene, JB Draper, WA Kretchmer, J Vandersand, J Kumar, V Mazzola, MS Saddow, SE

Citation: I. Sankin et al., On development of 6H-SiC LDMOS transistors using silane-ambient implant anneal, SOL ST ELEC, 45(9), 2001, pp. 1653-1657