Authors: Seitz, H Bauer, S Dusane, RO Schroder, B

Citation: H. Seitz et al., Influence of atomic hydrogen on the growth kinetics of a-Si : H films and on the properties of silicon substrates, THIN SOL FI, 395(1-2), 2001, pp. 116-120

Authors: Dusane, RO Bauer, S Schroder, B Oechsner, H

Citation: Ro. Dusane et al., Is the nucleation and coalescence behavior in the growth of a-Si : H filmsprepared by the CAT-CVD different?, THIN SOL FI, 395(1-2), 2001, pp. 121-124

Authors: Dusane, RO Diehl, F Weber, U Schroder, B

Citation: Ro. Dusane et al., Highly conducting doped microcrystalline silicon (mu c-Si : H) at very lowsubstrate temperature by Cat-CVD, THIN SOL FI, 395(1-2), 2001, pp. 202-205

Authors: Kumbhar, A Patil, SB Kumar, S Lal, R Dusane, RO

Citation: A. Kumbhar et al., Photoluminescent, wide-bandgap a-SiC : H alloy films deposited by Cat-CVD using acetylene, THIN SOL FI, 395(1-2), 2001, pp. 244-248

Authors: Patil, SB Kumbhar, A Waghmare, P Rao, VR Dusane, RO

Citation: Sb. Patil et al., Low temperature silicon nitride deposited by Cat-CVD for deep submicron metal-oxide-semiconductor devices, THIN SOL FI, 395(1-2), 2001, pp. 270-274