Authors:
Duxbury, N
Dawson, P
Bangert, U
Thrush, EJ
van der Stricht, W
Jacobs, K
Moerman, I
Citation: N. Duxbury et al., Effects of carrier gas on the properties of InGaN/GaN quantum well structures grown by MOCVD, PHYS ST S-B, 216(1), 1999, pp. 355-359