Authors: CERNY CL VIA GD EBEL JL DESALVO GC QUACH TK BOZADA CA DETTMER RW GILLESPIE JK JENKINS TJ PETTIFORD CI SEWELL JS EHRET JE MERKEL K WILSON A LYKE J

Citation: Cl. Cerny et al., XS-MET - A REDUCED COMPLEXITY FABRICATION PROCESS USING COMPLEMENTARYHETEROSTRUCTURE FIELD-EFFECT TRANSISTORS FOR ANALOG, LOW-POWER, SPACEAPPLICATIONS, IEEE aerospace and electronic systems magazine, 13(3), 1998, pp. 7-14

Authors: DESALVO GC LOOK DC BOZADA CA EBEL JL

Citation: Gc. Desalvo et al., DEPTH MEASUREMENT OF DOPED SEMICONDUCTORS USING THE HALL TECHNIQUE, Journal of applied physics, 81(1), 1997, pp. 281-284

Authors: LOOK DC JOGAI B KASPI R EBEL JL EVANS KR JONES RL NAKANO K SHERRIFF RE STULZ CE DESALVO GC ITO C

Citation: Dc. Look et al., EFFECTS OF IN PROFILE ON MATERIAL AND DEVICE PROPERTIES OF ALGAAS INGAAS/GAAS HIGH-ELECTRON-MOBILITY TRANSISTORS/, Journal of applied physics, 79(1), 1996, pp. 540-544

Authors: DESALVO GC BOZADA CA EBEL JL LOOK DC BARRETTE JP CERNY CLA DETTMER RW GILLESPIE JK HAVASY CK JENKINS TJ NAKANO K PETTIFORD CI QUACH TK SEWELL JS VIA GD

Citation: Gc. Desalvo et al., WET CHEMICAL DIGITAL ETCHING OF GAAS AT ROOM-TEMPERATURE, Journal of the Electrochemical Society, 143(11), 1996, pp. 3652-3656

Authors: DESALVO GC QUACH TK BOZADA CA DETTMER RW NAKANO K GILLESPIE JK VIA GD EBEL JL HAVASY CK

Citation: Gc. Desalvo et al., SIMPLIFIED OHMIC AND SCHOTTKY CONTACT FORMATION FOR FIELD-EFFECT TRANSISTORS USING THE SINGLE-LAYER INTEGRATED METAL FIELD-EFFECT TRANSISTOR (SLIMFET) PROCESS, IEEE transactions on semiconductor manufacturing, 8(3), 1995, pp. 314-318