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Results: 1-9 |
Results: 9
ANALYSIS OF OPTICAL-SPECTRA BY FOURIER METHODS
Authors: YOO SD EDWARDS NV ASPNES DE
Citation: Sd. Yoo et al., ANALYSIS OF OPTICAL-SPECTRA BY FOURIER METHODS, Thin solid films, 313, 1998, pp. 143-148
SPECTROSCOPIC ELLIPSOMETRY AND LOW-TEMPERATURE REFLECTANCE - COMPLEMENTARY ANALYSIS OF GAN THIN-FILMS
Authors: EDWARDS NV YOO SD BREMSER MD HORTON MN PERKINS NR WEEKS TW LIU H STALL RA KUECH TF DAVIS RF ASPNES DE
Citation: Nv. Edwards et al., SPECTROSCOPIC ELLIPSOMETRY AND LOW-TEMPERATURE REFLECTANCE - COMPLEMENTARY ANALYSIS OF GAN THIN-FILMS, Thin solid films, 313, 1998, pp. 187-192
TRENDS IN RESIDUAL-STRESS FOR GAN ALN/6H-SIC HETEROSTRUCTURES/
Authors: EDWARDS NV BREMSER MD DAVIS RF BATCHELOR AD YOO SD KARAN CF ASPNES DE
Citation: Nv. Edwards et al., TRENDS IN RESIDUAL-STRESS FOR GAN ALN/6H-SIC HETEROSTRUCTURES/, Applied physics letters, 73(19), 1998, pp. 2808-2810
GROWTH, DOPING AND CHARACTERIZATION OF ALXGA1-XN THIN-FILM ALLOYS ON 6H-SIC(0001) SUBSTRATES
Authors: BREMSER MD PERRY WG ZHELEVA T EDWARDS NV NAM OH PARIKH N ASPNES DE DAVIS RF
Citation: Md. Bremser et al., GROWTH, DOPING AND CHARACTERIZATION OF ALXGA1-XN THIN-FILM ALLOYS ON 6H-SIC(0001) SUBSTRATES, DIAMOND AND RELATED MATERIALS, 6(2-4), 1997, pp. 196-201
SPECTRAL-ANALYSIS OF ABOVE-EDGE, BELOW-EDGE, AND NEAR-BAND-EDGE PHENOMENA IN GAN THIN-FILMS
Authors: EDWARDS NV YOO SD BREMSER MD ZHELEVA T HORTON MN PERKINS NR WEEKS TW LIU H STALL RA KUECH TF DAVIS RF ASPNES DE
Citation: Nv. Edwards et al., SPECTRAL-ANALYSIS OF ABOVE-EDGE, BELOW-EDGE, AND NEAR-BAND-EDGE PHENOMENA IN GAN THIN-FILMS, Materials science & engineering. B, Solid-state materials for advanced technology, 50(1-3), 1997, pp. 134-141
VARIATION OF GAN VALENCE BANDS WITH BIAXIAL STRESS AND QUANTIFICATIONOF RESIDUAL-STRESS
Authors: EDWARDS NV YOO SD BREMSER MD WEEKS TW NAM OH DAVIS RF LIU H STALL RA HORTON MN PERKINS NR KUECH TF ASPNES DE
Citation: Nv. Edwards et al., VARIATION OF GAN VALENCE BANDS WITH BIAXIAL STRESS AND QUANTIFICATIONOF RESIDUAL-STRESS, Applied physics letters, 70(15), 1997, pp. 2001-2003
REAL-TIME ASSESSMENT OF OVERLAYER REMOVAL ON GAN, ALN, AND ALGAN SURFACES USING SPECTROSCOPIC ELLIPSOMETRY
Authors: EDWARDS NV BREMSER MD WEEKS TW KERN RS DAVIS RF ASPNES DE
Citation: Nv. Edwards et al., REAL-TIME ASSESSMENT OF OVERLAYER REMOVAL ON GAN, ALN, AND ALGAN SURFACES USING SPECTROSCOPIC ELLIPSOMETRY, Applied physics letters, 69(14), 1996, pp. 2065-2067
ORIGIN OF PHOTOLUMINESCENCE FROM ER3-DOPED GAAS AND AL0.4GA0.6AS GROWN BY MBE( CENTERS IN ERBIUM)
Authors: ZHANG T HWANG Y SUN J EDWARDS NV KOLBAS RM CALDWELL PJ
Citation: T. Zhang et al., ORIGIN OF PHOTOLUMINESCENCE FROM ER3-DOPED GAAS AND AL0.4GA0.6AS GROWN BY MBE( CENTERS IN ERBIUM), Journal of electronic materials, 22(9), 1993, pp. 1137-1140
2-TERMINAL BIAS INDUCED DUAL-WAVELENGTH SEMICONDUCTOR LIGHT EMITTER
Authors: ZHANG D REED FE ZHANG T EDWARDS NV KOLBAS RM
Citation: D. Zhang et al., 2-TERMINAL BIAS INDUCED DUAL-WAVELENGTH SEMICONDUCTOR LIGHT EMITTER, Applied physics letters, 63(24), 1993, pp. 3367-3369
Risultati: 1-9 |