Authors:
MEINERTZHAGEN A
ELRHARBI S
PETIT C
JOURDAIN M
Citation: A. Meinertzhagen et al., ON THE FREQUENCY LOSS OF METAL-OXIDE-SEMICONDUCTOR STRUCTURES UNDER DEPLETION AND WEAK INVERSION, Thin solid films, 256(1-2), 1995, pp. 253-256
Citation: S. Elrharbi et M. Jourdain, INFLUENCE OF THE OXIDE CHARGE BUILDUP DURING FOWLER-NORDHEIM STRESS ON THE CURRENT-VOLTAGE CHARACTERISTICS OF METAL-OXIDE-SEMICONDUCTOR CAPACITORS, Journal of non-crystalline solids, 187, 1995, pp. 175-180
Authors:
ELRHARBI S
JOURDAIN M
MEINERTZHAGEN A
ELHDIY A
PETIT C
Citation: S. Elrharbi et al., CHARGE GENERATION IN METAL-OXIDE-SEMICONDUCTOR CAPACITORS DURING FOWLER-NORDHEIM STRESS, Journal de physique. III, 4(6), 1994, pp. 1045-1051
Citation: S. Elrharbi et al., EFFECT OF TUNNELING ELECTRONS IN FOWLER-NORDHEIM REGIME ON THE CURRENT-VOLTAGE CHARACTERISTICS AND MODEL OF DEGRADATION OF METAL-OXIDE-SEMICONDUCTOR CAPACITORS, Journal of applied physics, 76(2), 1994, pp. 1013-1020