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2D CHANNEL TRANSPORT OF METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS ON NARROW-GAP HG1-XCDXTE (0.2-LESS-THAN-X-LESS-THAN-OR-EQUAL-TO-0.3)
Authors: JAEGER A HOERSTEL W THIEDE M SCHAFER P ELSING J
Citation: A. Jaeger et al., 2D CHANNEL TRANSPORT OF METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS ON NARROW-GAP HG1-XCDXTE (0.2-LESS-THAN-X-LESS-THAN-OR-EQUAL-TO-0.3), Semiconductor science and technology, 9(1), 1994, pp. 54-60
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