Authors: SOBOLEV NA GUSEV OB SHEK EI VDOVIN VI YUGOVA TG EMELYANOV AM

Citation: Na. Sobolev et al., PHOTOLUMINESCENCE AND STRUCTURAL DEFECTS IN ERBIUM-IMPLANTED SILICON ANNEALED AT HIGH-TEMPERATURE, Applied physics letters, 72(25), 1998, pp. 3326-3328

Authors: EMELYANOV AM SOBOLEV NA YAKIMENKO AN

Citation: Am. Emelyanov et al., ANOMALOUS TEMPERATURE-DEPENDENCE OF ERBIUM-RELATED ELECTROLUMINESCENCE IN REVERSE-BIASED SILICON P-N-JUNCTION, Applied physics letters, 72(10), 1998, pp. 1223-1225

Authors: SOBOLEV NA EMELYANOV AM SHTELMAKH KF

Citation: Na. Sobolev et al., AVALANCHE BREAKDOWN-RELATED ELECTROLUMINESCENCE IN SINGLE-CRYSTAL SI-ER-O, Applied physics letters, 71(14), 1997, pp. 1930-1932

Authors: GOROKHOV LN EMELYANOV AM SIDOROVA IV

Citation: Ln. Gorokhov et al., VAPOR COMPOSITION AND THE THERMODYNAMICS OF VAPORIZATION OF SODIUM-HYDROXIDE, Zurnal fiziceskoj himii, 70(6), 1996, pp. 1003-1006

Authors: EMELYANOV AM GOLUBEV VV

Citation: Am. Emelyanov et Vv. Golubev, INFLUENCE OF ANNEALING IN HYDROGEN AND IONIZING-RADIATION ON THE ELECTROPHYSICAL PARAMETERS OF THE SI-SIO2 INTERFACES - EXPERIMENT AND MODEL, Semiconductors, 28(12), 1994, pp. 1148-1152