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Results: 1-9 |
Results: 9
IN-SITU DIRECT MEASUREMENT OF ACTIVATION-ENERGIES FOR THE GENERATION OF MISFIT DISLOCATIONS IN THE INGAAS GAAS(001) SYSTEM/
Authors: LACEY G WHITEHOUSE CR PARBROOK PJ CULLIS AG KEIR AM MOCK P JOHNSON AD SMITH GW CLARK GF TANNER BK MARTIN T LUNN B HOGG JHC EMENY MT MURPHY B BENNETT S
Citation: G. Lacey et al., IN-SITU DIRECT MEASUREMENT OF ACTIVATION-ENERGIES FOR THE GENERATION OF MISFIT DISLOCATIONS IN THE INGAAS GAAS(001) SYSTEM/, Applied surface science, 123, 1998, pp. 718-724
GROWTH-MORPHOLOGY EVOLUTION AND DISLOCATION INTRODUCTION IN THE INGAAS GAAS HETEROEPITAXIAL SYSTEM/
Authors: CULLIS AG PIDDUCK AJ EMENY MT
Citation: Ag. Cullis et al., GROWTH-MORPHOLOGY EVOLUTION AND DISLOCATION INTRODUCTION IN THE INGAAS GAAS HETEROEPITAXIAL SYSTEM/, Journal of crystal growth, 158(1-2), 1996, pp. 15-27
MISFIT DISLOCATION SOURCES AT SURFACE RIPPLE TROUGHS IN CONTINUOUS HETEROEPITAXIAL LAYERS
Authors: CULLIS AG PIDDUCK AJ EMENY MT
Citation: Ag. Cullis et al., MISFIT DISLOCATION SOURCES AT SURFACE RIPPLE TROUGHS IN CONTINUOUS HETEROEPITAXIAL LAYERS, Physical review letters, 75(12), 1995, pp. 2368-2371
OPTICAL AND ELECTRICAL INVESTIGATION OF AN ASYMMETRIC STRAINED-LAYER DOUBLE-BARRIER RESONANT-TUNNELING STRUCTURE
Authors: TAGG WIE SKOLNICK MS MOWBRAY DJ WHITTAKER DM EMENY MT WHITEHOUSE CR BUCKLE PD
Citation: Wie. Tagg et al., OPTICAL AND ELECTRICAL INVESTIGATION OF AN ASYMMETRIC STRAINED-LAYER DOUBLE-BARRIER RESONANT-TUNNELING STRUCTURE, Semiconductor science and technology, 9(9), 1994, pp. 1608-1615
ELASTIC AND INELASTIC TUNNELING IN A STRAINED-LAYER DOUBLE-BARRIER RESONANT-TUNNELING STRUCTURE
Authors: TAGG WIE WHITE CRH SKOLNICK MS EAVES L EMENY MT WHITEHOUSE CR
Citation: Wie. Tagg et al., ELASTIC AND INELASTIC TUNNELING IN A STRAINED-LAYER DOUBLE-BARRIER RESONANT-TUNNELING STRUCTURE, Physical review. B, Condensed matter, 48(7), 1993, pp. 4487-4491
X-RAY TOPOGRAPHY OF LATTICE-RELAXATION IN STRAINED-LAYER SEMICONDUCTORS - POSTGROWTH STUDIES AND A NEW FACILITY FOR INSITU TOPOGRAPHY DURING MBE GROWTH
Authors: BARNETT SJ WHITEHOUSE CR KEIR AM CLARK GF USHER B TANNER BK EMENY MT JOHNSON AD
Citation: Sj. Barnett et al., X-RAY TOPOGRAPHY OF LATTICE-RELAXATION IN STRAINED-LAYER SEMICONDUCTORS - POSTGROWTH STUDIES AND A NEW FACILITY FOR INSITU TOPOGRAPHY DURING MBE GROWTH, Journal of physics. D, Applied physics, 26(4A), 1993, pp. 45-49
ELECTRON MOBILITIES AND PHOTOELECTRON LIFETIMES IN ALGAAS GAAS AND INGAAS GAAS QUANTUM-WELL INFRARED DETECTORS
Authors: KANE MJ MILLIDGE S EMENY MT GUY DRP LEE D WHITEHOUSE CR
Citation: Mj. Kane et al., ELECTRON MOBILITIES AND PHOTOELECTRON LIFETIMES IN ALGAAS GAAS AND INGAAS GAAS QUANTUM-WELL INFRARED DETECTORS, Journal of applied physics, 73(11), 1993, pp. 7966-7968
OPTIMIZATION OF THE GROWTH-PARAMETERS FOR THE MOLECULAR-BEAM EPITAXIAL-GROWTH OF STRAINED IN0.16GA0.84AS AL0.33GA0.67AS SINGLE-QUANTUM-WELLSTRUCTURES/
Authors: EMENY MT SKOLNICK MS WHITEHOUSE CR HAYES DG CALCOTT PDJ HIGGS AW
Citation: Mt. Emeny et al., OPTIMIZATION OF THE GROWTH-PARAMETERS FOR THE MOLECULAR-BEAM EPITAXIAL-GROWTH OF STRAINED IN0.16GA0.84AS AL0.33GA0.67AS SINGLE-QUANTUM-WELLSTRUCTURES/, Applied physics letters, 63(6), 1993, pp. 824-826
VALENCE BAND SPIN SPLITTING IN STRAINED IN0.18GA0.82AS GAAS QUANTUM-WELLS/
Authors: WARBURTON RJ MARTIN RW NICHOLAS RJ HOWARD LK EMENY MT
Citation: Rj. Warburton et al., VALENCE BAND SPIN SPLITTING IN STRAINED IN0.18GA0.82AS GAAS QUANTUM-WELLS/, Semiconductor science and technology, 6(5), 1991, pp. 359-364
Risultati: 1-9 |