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Results: 1-13 |
Results: 13

Authors: MOISAN M ZAKRZEWSKI Z ETEMADI R ROSTAING JC
Citation: M. Moisan et al., MULTITUBE SURFACE-WAVE DISCHARGES FOR INCREASED GAS THROUGHPUT AT ATMOSPHERIC-PRESSURE, Journal of applied physics, 83(11), 1998, pp. 5691-5701

Authors: ETEMADI R GODET C PERRIN J SEIGNAC A BALLUTAUD D
Citation: R. Etemadi et al., OPTICAL AND COMPOSITIONAL STUDY OF SILICON-OXIDE THIN-FILMS DEPOSITEDIN A DUAL-MODE (MICROWAVE RADIOFREQUENCY) PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION REACTOR/, Journal of applied physics, 83(10), 1998, pp. 5224-5232

Authors: ZHU M HAN Y WEHRSPOHN RB GODET C ETEMADI R BALLUTAUD D
Citation: M. Zhu et al., THE ORIGIN OF VISIBLE PHOTOLUMINESCENCE FROM SILICON-OXIDE THIN-FILMSPREPARED BY DUAL-PLASMA CHEMICAL-VAPOR-DEPOSITION, Journal of applied physics, 83(10), 1998, pp. 5386-5393

Authors: ETEMADI R GODET C PERRIN J
Citation: R. Etemadi et al., PHENOMENOLOGY OF A DUAL-MODE MICROWAVE RF DISCHARGE USED FOR THE DEPOSITION OF SILICON-OXIDE THIN-LAYERS/, Plasma sources science & technology, 6(3), 1997, pp. 323-333

Authors: ETEMADI R GODET C PERRIN J DREVILLON B HUC J PAREY JY ROSTAING JC COEURET F
Citation: R. Etemadi et al., DUAL-PLASMA REACTOR FOR LOW-TEMPERATURE DEPOSITION OF WIDE BAND-GAP SILICON ALLOYS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(2), 1997, pp. 320-331

Authors: BOUREE JE GODET C ETEMADI R DREVILLON B
Citation: Je. Bouree et al., DUAL-MODE PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION (PECVD) OF POLYMER-LIKE A-C-H FILMS - VIBRATIONAL AND OPTICAL-PROPERTIES, Synthetic metals, 76(1-3), 1996, pp. 191-194

Authors: ETEMADI R GODET C PERRIN J BOUREE J DREVILLON B CLERC C
Citation: R. Etemadi et al., HYDROGEN INCORPORATION IN DUAL-MODE PECVD AMORPHOUS-SILICON OXIDE THIN-FILMS, Surface & coatings technology, 80(1-2), 1996, pp. 8-12

Authors: BOUREE JE GODET C DREVILLON B ETEMADI R HEITZ T CERNOGORA J FAVE JL
Citation: Je. Bouree et al., OPTICAL AND LUMINESCENCE PROPERTIES OF POLYMER-LIKE A-C-H FILMS DEPOSITED IN A DUAL-MODE PECVD REACTOR, Journal of non-crystalline solids, 200, 1996, pp. 623-627

Authors: GODET C ETEMADI R CLERC C
Citation: C. Godet et al., HELIUM ION-INDUCED STOICHIOMETRY MODIFICATION IN HYDROGENATED SILICON-OXIDE FILMS, Applied physics letters, 69(25), 1996, pp. 3845-3847

Authors: ROSTAING JC COEURET F PELLETIER J LAGARDE T ETEMADI R
Citation: Jc. Rostaing et al., HIGHLY HOMOGENEOUS SILICA COATINGS FOR OPTICAL AND PROTECTIVE APPLICATIONS DEPOSITED BY PECVD AT ROOM-TEMPERATURE IN A PLANAR UNIFORM DISTRIBUTED ELECTRON-CYCLOTRON-RESONANCE PLASMA REACTOR, Thin solid films, 270(1-2), 1995, pp. 49-54

Authors: ETEMADI R GODET C KILDEMO M BOUREE JE BRENOT R DREVILLON B
Citation: R. Etemadi et al., DUAL-MODE RADIO-FREQUENCY MICROWAVE PLASMA DEPOSITION OF AMORPHOUS-SILICON OXIDE THIN-FILMS, Journal of non-crystalline solids, 187, 1995, pp. 70-74

Authors: ROSTAING JC COEURET F DREVILLON B ETEMADI R GODET C HUC J PAREY JY YAKOVLEV VA
Citation: Jc. Rostaing et al., SILICON-BASED, PROTECTIVE TRANSPARENT MULTILAYER COATINGS DEPOSITED AT HIGH-RATE ON OPTICAL POLYMERS BY DUAL-MODE MW RF PECVD/, Thin solid films, 236(1-2), 1993, pp. 58-63

Authors: SENEMAUD C GHEORGHIU A AMOURA L ETEMADI R SHIRAI H GODET C FANG M GUJRATHI S
Citation: C. Senemaud et al., LOCAL ORDER AND H-BONDING IN N-RICH AMORPHOUS-SILICON NITRIDE, Journal of non-crystalline solids, 166, 1993, pp. 1073-1076
Risultati: 1-13 |