Authors:
EVERAERT JL
VERHAEGEN F
VANMEIRHAEGHE RL
UYTTENHOVE J
CARDON F
Citation: Jl. Everaert et al., QUANTITATIVE PREDICTION OF ACCEPTOR CONCENTRATION REDUCTION IN BORON-DOPED SILICON DUE TO ELECTRON-IRRADIATION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 117(4), 1996, pp. 397-402
Authors:
EVERAERT JL
VANMEIRHAEGHE RL
LAFLERE WH
CARDON F
Citation: Jl. Everaert et al., A BALLISTIC-ELECTRON-EMISSION MICROSCOPY (BEEM) STUDY OF THE BARRIER HEIGHT CHANGE OF AU N-GAAS SCHOTTKY CONTACTS DUE TO MECHANICAL POLISHING/, Semiconductor science and technology, 10(4), 1995, pp. 504-508