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Results: 1-7 |
Results: 7
FIRST STAGE OF OXYGEN AGGREGATION IN SILICON - THE OXYGEN DIMER
Authors: OBERG S EWELS CP JONES R HALLBERG T LINDSTROM JL MURIN LI BRIDDON PR
Citation: S. Oberg et al., FIRST STAGE OF OXYGEN AGGREGATION IN SILICON - THE OXYGEN DIMER, Physical review letters, 81(14), 1998, pp. 2930-2933
CYCLIC CLUSTER MODEL FOR CALCULATING DEFECTS IN SOLIDS USING THE LOCAL-DENSITY APPROXIMATION
Authors: MIRO J DEAK P EWELS CP JONES R
Citation: J. Miro et al., CYCLIC CLUSTER MODEL FOR CALCULATING DEFECTS IN SOLIDS USING THE LOCAL-DENSITY APPROXIMATION, Journal of physics. Condensed matter, 9(44), 1997, pp. 9555-9562
THEORETICAL-STUDIES ON NITROGEN-OXYGEN COMPLEXES IN SILICON
Authors: GALI A MIRO J DEAK P EWELS CP JONES R
Citation: A. Gali et al., THEORETICAL-STUDIES ON NITROGEN-OXYGEN COMPLEXES IN SILICON, Journal of physics. Condensed matter, 8(41), 1996, pp. 7711-7722
VACANCY-H AND ACCEPTOR-H COMPLEXES IN INP
Authors: EWELS CP OBERG S JONES R PAJOT B BRIDDON PR
Citation: Cp. Ewels et al., VACANCY-H AND ACCEPTOR-H COMPLEXES IN INP, Semiconductor science and technology, 11(4), 1996, pp. 502-507
SHALLOW THERMAL DONOR DEFECTS IN SILICON
Authors: EWELS CP JONES R OBERG S MIRO J DEAK P
Citation: Cp. Ewels et al., SHALLOW THERMAL DONOR DEFECTS IN SILICON, Physical review letters, 77(5), 1996, pp. 865-868
HYDROGEN PASSIVATED DEFECTS IN INP
Authors: EWELS CP OBERG S BRIDDON PR GOSS J JONES R BREUER SJ DARWICH R PAJOT B
Citation: Cp. Ewels et al., HYDROGEN PASSIVATED DEFECTS IN INP, Solid state communications, 93(5), 1995, pp. 459-460
THE HYDROGEN COMPLEXES IN GALLIUM-ARSENIDE AND INDIUM-PHOSPHIDE DOPEDWITH MAGNESIUM
Authors: RAHBI R PAJOT B EWELS CP OBERG S GOSS J JONES R NISSIM Y THEYS B BLAAUW C
Citation: R. Rahbi et al., THE HYDROGEN COMPLEXES IN GALLIUM-ARSENIDE AND INDIUM-PHOSPHIDE DOPEDWITH MAGNESIUM, Solid state communications, 93(5), 1995, pp. 462-462
Risultati: 1-7 |