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Results: 1-11 |
Results: 11
MECHANICAL LITHOGRAPHY USING A SINGLE-POINT DIAMOND MACHINING
Authors: GOSS SH GRAZULIS L TOMICH DH EYINK KG WALCK SD HAAS TW THOMAS DR LAMPERT WV
Citation: Sh. Goss et al., MECHANICAL LITHOGRAPHY USING A SINGLE-POINT DIAMOND MACHINING, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1439-1445
ATOMIC-FORCE MICROSCOPY CORRELATED WITH SPECTROSCOPIC ELLIPSOMETRY DURING HOMEPITAXIAL GROWTH ON GAAS(111)B SUBSTRATES
Authors: TOMICH DH EYINK KG SEAFORD ML TAFERNER WF TU CW LAMPERT WV
Citation: Dh. Tomich et al., ATOMIC-FORCE MICROSCOPY CORRELATED WITH SPECTROSCOPIC ELLIPSOMETRY DURING HOMEPITAXIAL GROWTH ON GAAS(111)B SUBSTRATES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1479-1483
CHARACTERIZATION OF LOW-TEMPERATURE-GROWN ALSB AND GASB BUFFER LAYERS
Authors: EYINK KG SEAFORD ML HAAS TW TOMICH DH LAMPERT WV WALCK SD SOLOMON JS MITCHEL WC EASTMAN LF
Citation: Kg. Eyink et al., CHARACTERIZATION OF LOW-TEMPERATURE-GROWN ALSB AND GASB BUFFER LAYERS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(4), 1997, pp. 1187-1190
SUBNANOMETER ANALYSIS OF MOLECULAR-BEAM EPITAXY-GROWN TERNARY ARSENIDES
Authors: SEAFORD ML WU W EYINK KG TOMICH DH TUCKER JR EASTMAN LF
Citation: Ml. Seaford et al., SUBNANOMETER ANALYSIS OF MOLECULAR-BEAM EPITAXY-GROWN TERNARY ARSENIDES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(4), 1997, pp. 1274-1278
A COMPARISON OF THE CRITICAL THICKNESS FOR MBE GROWN LT-GAAS DETERMINED BY IN-SITU ELLIPSOMETRY AND TRANSMISSION ELECTRON-MICROSCOPY
Authors: EYINK KG CAPANO MA WALCK SD HAAS TW STREETMAN BG
Citation: Kg. Eyink et al., A COMPARISON OF THE CRITICAL THICKNESS FOR MBE GROWN LT-GAAS DETERMINED BY IN-SITU ELLIPSOMETRY AND TRANSMISSION ELECTRON-MICROSCOPY, Journal of electronic materials, 26(4), 1997, pp. 391-396
USE OF OPTICAL-FIBER PYROMETRY IN MOLECULAR-BEAM EPITAXY
Authors: EYINK KG PATTERSON JK ADAMS SJ HAAS TW LAMPERT WV
Citation: Kg. Eyink et al., USE OF OPTICAL-FIBER PYROMETRY IN MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 175, 1997, pp. 262-266
IN-SITU AND EX-SITU SPECTROSCOPIC INVESTIGATION OF LOW-TEMPERATURE-GROWN GALLIUM-ARSENIDE BY MOLECULAR-BEAM EPITAXY
Authors: EYINK KG CAPANO MA WALCK SD HAAS TW STREETMAN BG
Citation: Kg. Eyink et al., IN-SITU AND EX-SITU SPECTROSCOPIC INVESTIGATION OF LOW-TEMPERATURE-GROWN GALLIUM-ARSENIDE BY MOLECULAR-BEAM EPITAXY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(3), 1996, pp. 2278-2281
NEURAL-NET COMPUTING FOR INTERPRETATION OF SEMICONDUCTOR FILM OPTICALELLIPSOMETRY PARAMETERS
Authors: PARK GH PAO YH IGELNIK B EYINK KG LECLAIR SR
Citation: Gh. Park et al., NEURAL-NET COMPUTING FOR INTERPRETATION OF SEMICONDUCTOR FILM OPTICALELLIPSOMETRY PARAMETERS, IEEE transactions on neural networks, 7(4), 1996, pp. 816-829
IN-SITU ELLIPSOMETRIC STUDY OF AS CAPPING AND LOW-TEMPERATURE MOLECULAR-BEAM EPITAXY GAAS GROWTH AND IMPLICATIONS FOR THE LOW-TEMPERATURE CRITICAL THICKNESS
Authors: EYINK KG CONG YS GILBERT R CAPANO MA HAAS TW STREETMAN BG
Citation: Kg. Eyink et al., IN-SITU ELLIPSOMETRIC STUDY OF AS CAPPING AND LOW-TEMPERATURE MOLECULAR-BEAM EPITAXY GAAS GROWTH AND IMPLICATIONS FOR THE LOW-TEMPERATURE CRITICAL THICKNESS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(4), 1993, pp. 1423-1426
REAL-TIME, HEURISTIC-BASED CONTROL OF MOLECULAR-BEAM EPITAXY
Authors: PATTERSON OD EYINK KG CONG S
Citation: Od. Patterson et al., REAL-TIME, HEURISTIC-BASED CONTROL OF MOLECULAR-BEAM EPITAXY, Journal of materials engineering and performance, 2(5), 1993, pp. 715-720
OBSERVATION OF LOW-T GAAS GROWTH REGIMES BY REAL-TIME ELLIPSOMETRY
Authors: EYINK KG CONG YS CAPANO MA HAAS TW GILBERT RA STREETMAN BG
Citation: Kg. Eyink et al., OBSERVATION OF LOW-T GAAS GROWTH REGIMES BY REAL-TIME ELLIPSOMETRY, Journal of electronic materials, 22(12), 1993, pp. 1387-1390
Risultati: 1-11 |