AAAAAA
Results:
1-9
|
Results: 9
Authors:
Cobet, C
Esser, N
Zetter, JT
Richter, W
Waltereit, P
Brandt, O
Ploog, KH
Peters, S
Edwards, NV
Lindquist, OPA
Cardona, M
Citation: C. Cobet et al., Optical properties of wurtzite AlxGa1-xN (x < 0.1) parallel and perpendicular to the c axis - art. no. 165203, PHYS REV B, 6416(16), 2001, pp. 5203
Authors:
Pozina, G
Edwards, NV
Bergman, JP
Monemar, B
Bremser, MD
Davis, RF
Citation: G. Pozina et al., Time-resolved photoluminescence in strained GaN layers, PHYS ST S-A, 183(1), 2001, pp. 151-155
Authors:
Pozina, G
Edwards, NV
Bergman, JP
Paskova, T
Monemar, B
Bremser, MD
Davis, RF
Citation: G. Pozina et al., Time-resolved spectroscopy of strained GaN/AlN/6H-SiC heterostructures grown by metalorganic chemical vapor deposition, APPL PHYS L, 78(8), 2001, pp. 1062-1064
Authors:
Lindquist, OPA
Jarrendahl, K
Peters, S
Zettler, JT
Cobet, C
Esser, N
Aspnes, DE
Henry, A
Edwards, NV
Citation: Opa. Lindquist et al., Ordinary and extraordinary dielectric functions of 4H-and 6H-SiC from 3.5 to 9.0 eV, APPL PHYS L, 78(18), 2001, pp. 2715-2717
Authors:
Edwards, NV
Bremser, MD
Batchelor, AD
Buyanova, IA
Madsen, LD
Yoo, SD
Welhkamp, T
Wilmers, K
Cobet, C
Esser, N
Davis, RF
Aspnes, DE
Monemar, B
Citation: Nv. Edwards et al., Optical characterization of wide bandgap semiconductors, THIN SOL FI, 364(1-2), 2000, pp. 98-106
Authors:
Cobet, C
Wilmers, K
Wethkamp, T
Edwards, NV
Esser, N
Richter, W
Citation: C. Cobet et al., Optical properties of SiC investigated by spectroscopic ellipsometry from 3.5 to 10 eV, THIN SOL FI, 364(1-2), 2000, pp. 111-113
Authors:
Edwards, NV
Jarrendahl, K
Aspnes, DE
Robbie, K
Powell, GD
Cobet, C
Esser, N
Richter, W
Madsen, LD
Citation: Nv. Edwards et al., Real-time assessment of selected surface preparation regimens for 4H-SiC surfaces using spectroscopic ellipsometry, SURF SCI, 464(1), 2000, pp. L703-L707
Authors:
Rossow, U
Aspnes, DE
Ambacher, O
Cimalla, V
Edwards, NV
Bremser, M
Davis, RF
Schaefer, JA
Stutzmann, M
Citation: U. Rossow et al., Reflectance difference spectroscopy characterization of AlxGa1-xN-compoundlayers, PHYS ST S-B, 216(1), 1999, pp. 215-220
Authors:
Buyanova, IA
Wagner, M
Chen, WM
Edwards, NV
Monemar, B
Lindstrom, JL
Bremser, MD
Davis, RF
Amano, H
Akasaki, I
Citation: Ia. Buyanova et al., Electronic structure of the 0.88-eV luminescence center in electron-irradiated gallium nitride, PHYS REV B, 60(3), 1999, pp. 1746-1751
Risultati:
1-9
|