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Results:
1-4
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Results: 4
Theoretical sputtering yields of Al and Mg targets in physical vapor deposition processes
Authors:
Bordes, JM Bordes, C Ehret, E Gschwind, R Bauer, P
Citation:
Jm. Bordes et al., Theoretical sputtering yields of Al and Mg targets in physical vapor deposition processes, J VAC SCI A, 19(3), 2001, pp. 805-811
Scanning tunneling microscopy study of the Er/Ge(111) c(2X8) interface
Authors:
Pelletier, S Ehret, E Gautier, B Palmino, F Labrune, JC
Citation:
S. Pelletier et al., Scanning tunneling microscopy study of the Er/Ge(111) c(2X8) interface, J VAC SCI A, 18(6), 2000, pp. 2738-2741
Er deposition in the submonolayer range on weakly boron-doped Si(111) surface
Authors:
Palmino, F Pelletier, S Ehret, E Gautier, B Labrune, JC
Citation:
F. Palmino et al., Er deposition in the submonolayer range on weakly boron-doped Si(111) surface, J VAC SCI A, 18(5), 2000, pp. 2239-2243
Two-dimensional epitaxial ErSi2 grown on B-passivated Si(111)-root 3x root3R30 degrees surfaces
Authors:
Pelletier, S Ehret, E Gautier, B Palmino, F Labrune, JC Wetzel, P Pirri, C Gewinner, G
Citation:
S. Pelletier et al., Two-dimensional epitaxial ErSi2 grown on B-passivated Si(111)-root 3x root3R30 degrees surfaces, PHYS REV B, 60(16), 1999, pp. 11645-11652
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