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Results: 1-9 |
Results: 9
Synchrotron radiation studies of thin films and implanted layers with the materials research endstation of ROBL
Authors: Schell, N Matz, W Eichhorn, F Prokert, F Berberich, F
Citation: N. Schell et al., Synchrotron radiation studies of thin films and implanted layers with the materials research endstation of ROBL, J ALLOY COM, 328(1-2), 2001, pp. 105-111
Ion-beam-induced crystal grain nucleation in amorphous silicon carbide
Authors: Hofgen, A Heera, V Mucklich, A Eichhorn, F Skorupa, W
Citation: A. Hofgen et al., Ion-beam-induced crystal grain nucleation in amorphous silicon carbide, NUCL INST B, 161, 2000, pp. 917-921
Annealing and recrystallization of amorphous silicon carbide produced by ion implantation
Authors: Hofgen, A Heera, V Eichhorn, F Skorupa, W Moller, W
Citation: A. Hofgen et al., Annealing and recrystallization of amorphous silicon carbide produced by ion implantation, MAT SCI E B, 61-2, 1999, pp. 353-357
ROBL - a CRG beamline for radiochemistry and materials research at the ESRF
Authors: Matz, W Schell, N Bernhard, G Prokert, F Reich, T Claussner, J Oehme, W Schlenk, R Dienel, S Funke, H Eichhorn, F Betzl, M Prohl, D Strauch, U Huttig, G Krug, H Neumann, W Brendler, V Reichel, P Denecke, MA Nitsche, H
Citation: W. Matz et al., ROBL - a CRG beamline for radiochemistry and materials research at the ESRF, J SYNCHROTR, 6, 1999, pp. 1076-1085
Distribution of gettering centres at a buried amorphous layer in silicon
Authors: Kogler, R Eichhorn, F Mucklich, A Danilin, AB Skorupa, W
Citation: R. Kogler et al., Distribution of gettering centres at a buried amorphous layer in silicon, NUCL INST B, 148(1-4), 1999, pp. 334-339
Structural analysis of Si/Fe and Mo/Fe ion-beam mixed layers
Authors: Jagielski, J Kopcewicz, M Turos, A Eichhorn, F
Citation: J. Jagielski et al., Structural analysis of Si/Fe and Mo/Fe ion-beam mixed layers, NUCL INST B, 148(1-4), 1999, pp. 886-890
Reciprocal space mapping and reflectivity investigations of epi-ready InP substrate
Authors: Sass, J Mazur, K Gladki, A Turos, A Eichhorn, F
Citation: J. Sass et al., Reciprocal space mapping and reflectivity investigations of epi-ready InP substrate, PHYS ST S-A, 171(1), 1999, pp. 395-401
Strain and SiC particle formation in silicon implanted with carbon ions ofmedium fluence studied by synchrotron x-ray diffraction
Authors: Eichhorn, F Schell, N Matz, W Kogler, R
Citation: F. Eichhorn et al., Strain and SiC particle formation in silicon implanted with carbon ions ofmedium fluence studied by synchrotron x-ray diffraction, J APPL PHYS, 86(8), 1999, pp. 4184-4187
Annealing and recrystallization of amorphous silicon carbide produced by ion implantation
Authors: Hofgen, A Heera, V Eichhorn, F Skorupa, W
Citation: A. Hofgen et al., Annealing and recrystallization of amorphous silicon carbide produced by ion implantation, J APPL PHYS, 84(9), 1998, pp. 4769-4774
Risultati: 1-9 |