Citation: H. Eisele et al., Recent advances in the performance of InP Gunn devices and GaAs TUNNETT diodes for the 100-300-GHz frequency range and above, IEEE MICR T, 48(4), 2000, pp. 626-631
Citation: H. Eisele, Influence of probabilistic considerations on the maintenance procedures inSwiss nuclear power plants, ATW-INT Z K, 44(12), 1999, pp. 728
Authors:
Flebbe, O
Eisele, H
Kalka, T
Heinrichsdorff, F
Krost, A
Bimberg, D
Dahne-Prietsch, M
Citation: O. Flebbe et al., Atomic structure of stacked InAs quantum dots grown by metal-organic chemical vapor deposition, J VAC SCI B, 17(4), 1999, pp. 1639-1648
Authors:
Eisele, H
Flebbe, O
Kalka, T
Heinrichsdorff, F
Krost, A
Bimberg, D
Dahne-Prietsch, M
Citation: H. Eisele et al., The stoichiometry of InAs quantum dots determined by cross-sectional scanning tunneling microscopy, PHYS ST S-B, 215(1), 1999, pp. 865-868
Citation: H. Eisele, Second-harmonic power extraction from InP Gunn devices with more than 1 mWin 260-320GHz frequency range, ELECTR LETT, 34(25), 1998, pp. 2412-2413