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Results: 1-10 |
Results: 10

Authors: Eisele, H Rydberg, A Haddad, GI
Citation: H. Eisele et al., Recent advances in the performance of InP Gunn devices and GaAs TUNNETT diodes for the 100-300-GHz frequency range and above, IEEE MICR T, 48(4), 2000, pp. 626-631

Authors: Eisele, H
Citation: H. Eisele, Influence of probabilistic considerations on the maintenance procedures inSwiss nuclear power plants, ATW-INT Z K, 44(12), 1999, pp. 728

Authors: Flebbe, O Eisele, H Kalka, T Heinrichsdorff, F Krost, A Bimberg, D Dahne-Prietsch, M
Citation: O. Flebbe et al., Atomic structure of stacked InAs quantum dots grown by metal-organic chemical vapor deposition, J VAC SCI B, 17(4), 1999, pp. 1639-1648

Authors: Eisele, H
Citation: H. Eisele, Handbook of terminology management, vol 1, Basic aspects of terminology management., KNOWL ORGAN, 26(1), 1999, pp. 59-61

Authors: Eisele, H Flebbe, O Kalka, T Heinrichsdorff, F Krost, A Bimberg, D Dahne-Prietsch, M
Citation: H. Eisele et al., The stoichiometry of InAs quantum dots determined by cross-sectional scanning tunneling microscopy, PHYS ST S-B, 215(1), 1999, pp. 865-868

Authors: Eisele, H Flebbe, O Kalka, T Dahne-Prietsch, M
Citation: H. Eisele et al., Cross-sectional STM study of InAs quantum dots for laser devices, SURF INT AN, 27(5-6), 1999, pp. 537-541

Authors: Eisele, H Scheel, HE Sladkovic, R Trickl, T
Citation: H. Eisele et al., High-resolution lidar measurements of stratosphere-troposphere exchange, J ATMOS SCI, 56(2), 1999, pp. 319-330

Authors: Goetz, PG Eisele, H Yang, K Syao, KC Qasaimeh, O Bhattacharya, P
Citation: Pg. Goetz et al., InP-based MMIC components for an optical phase-locked loop, IEEE MICR T, 47(7), 1999, pp. 1241-1250

Authors: Eisele, H Flebbe, O Kalka, T Preinesberger, C Heinrichsdorff, F Krost, A Bimberg, D Dahne-Prietsch, M
Citation: H. Eisele et al., Cross-sectional scanning-tunneling microscopy of stacked InAs quantum dots, APPL PHYS L, 75(1), 1999, pp. 106-108

Authors: Eisele, H
Citation: H. Eisele, Second-harmonic power extraction from InP Gunn devices with more than 1 mWin 260-320GHz frequency range, ELECTR LETT, 34(25), 1998, pp. 2412-2413
Risultati: 1-10 |