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Results:
1-8
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Results: 8
Authors:
Droopad, R
Yu, Z
Ramdani, J
Hilt, L
Curless, J
Overgaard, C
Edwards, JL
Finder, J
Eisenbeiser, K
Ooms, W
Citation: R. Droopad et al., Development of high dielectric constant epitaxial oxides on silicon by molecular beam epitaxy, MAT SCI E B, 87(3), 2001, pp. 292-296
Authors:
Hu, XM
Yu, Z
Curless, JA
Droopad, R
Eisenbeiser, K
Edwards, JL
Ooms, WJ
Sarid, D
Citation: Xm. Hu et al., Comparative study of Sr and Ba adsorption on Si(100), APPL SURF S, 181(1-2), 2001, pp. 103-110
Authors:
Droopad, R
Yu, ZY
Ramdani, J
Hilt, L
Curless, J
Overgaard, C
Edwards, JL
Finder, J
Eisenbeiser, K
Wang, J
Kaushik, V
Ngyuen, BY
Ooms, B
Citation: R. Droopad et al., Epitaxial oxides on silicon grown by molecular beam epitaxy, J CRYST GR, 227, 2001, pp. 936-943
Authors:
Eisenbeiser, K
Huang, JH
Salih, A
Hadizad, P
Pitts, B
Citation: K. Eisenbeiser et al., Manufacturable GaAsVFET for power switching applications, IEEE ELEC D, 21(4), 2000, pp. 144-145
Authors:
Ramdani, J
Droopad, R
Yu, Z
Curless, JA
Overgaard, CD
Finder, J
Eisenbeiser, K
Hallmark, JA
Ooms, WJ
Kaushik, V
Alluri, P
Pietambaram, S
Citation: J. Ramdani et al., Interface characterization of high-quality SrTiO3 thin films on Si(100) substrates grown by molecular beam epitaxy, APPL SURF S, 159, 2000, pp. 127-133
Authors:
Chambers, SA
Liang, Y
Yu, Z
Droopad, R
Ramdani, J
Eisenbeiser, K
Citation: Sa. Chambers et al., Band discontinuities at epitaxial SrTiO3/Si(001) heterojunctions, APPL PHYS L, 77(11), 2000, pp. 1662-1664
Authors:
Eisenbeiser, K
Finder, JM
Yu, Z
Ramdani, J
Curless, JA
Hallmark, JA
Droopad, R
Ooms, WJ
Salem, L
Bradshaw, S
Overgaard, CD
Citation: K. Eisenbeiser et al., Field effect transistors with SrTiO3 gate dielectric on Si, APPL PHYS L, 76(10), 2000, pp. 1324-1326
Authors:
Eisenbeiser, K
Droopad, R
Huang, JH
Citation: K. Eisenbeiser et al., Metamorphic InAlAs/InGaAs enhancement mode HEMT's on GaAs substrates, IEEE ELEC D, 20(10), 1999, pp. 507-509
Risultati:
1-8
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