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Results:
1-2
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Results: 2
0.3 dB minimum noise figure at 2.5 GHz of 0.13 mu m Si/Si0.58Ge0.42 n-MODFETs
Authors:
Enciso, M Aniel, F Crozat, P Adde, R Zeuner, M Fox, A Hackbarth, T
Citation:
M. Enciso et al., 0.3 dB minimum noise figure at 2.5 GHz of 0.13 mu m Si/Si0.58Ge0.42 n-MODFETs, ELECTR LETT, 37(17), 2001, pp. 1089-1090
0.1 mu m gate length p-type Ge/Si0.4Ge0.6 MODFET with 135GHz f(max)
Authors:
Hock, G Hackbarth, T Kab, N Herzog, HJ Enciso, M Aniel, F Crozat, P Adde, R Kohn, E Konig, U
Citation:
G. Hock et al., 0.1 mu m gate length p-type Ge/Si0.4Ge0.6 MODFET with 135GHz f(max), ELECTR LETT, 36(16), 2000, pp. 1428-1429
Risultati:
1-2
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