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Citation: Jv. Gumenjuk-sichevskaja et al., Charge transport in HgCdTe-based n(+)-p photodiodes, SEMICONDUCT, 35(7), 2001, pp. 800-806

Authors: Esaev, DG Sinitsa, SP

Citation: Dg. Esaev et Sp. Sinitsa, Photoelectric characteristics of infrared photodetectors with blocked hopping conduction, SEMICONDUCT, 35(4), 2001, pp. 459-463

Authors: Vasil'ev, VV Esaev, DG Kravchenko, AF Osadchii, VM Suslyakov, AO

Citation: Vv. Vasil'Ev et al., Study of the effect of graded gap epilayers on the performance of CdxHg1-xTe photodiodes, SEMICONDUCT, 34(7), 2000, pp. 844-847

Authors: Esaev, DG Sinitsa, SP

Citation: Dg. Esaev et Sp. Sinitsa, Injection currents in silicon structures with blocked hopping conduction, SEMICONDUCT, 34(10), 2000, pp. 1219-1223

Authors: Esaev, DG Sinitsa, SP Chernyavskii, EV

Citation: Dg. Esaev et al., Current-voltage characteristics of Si : As blocked impurity band photodetectors with hopping conductivity (BIB-II), SEMICONDUCT, 33(8), 1999, pp. 915-919

Authors: Esaev, DG Sinitsa, SP Chernyavskii, EV

Citation: Dg. Esaev et al., Current-voltage characteristics of Si : As-based photodetectors with blocked hopping conductivity, SEMICONDUCT, 33(5), 1999, pp. 574-577