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Citation: B. Arnaudov et al., Modeling of the free-electron recombination band in emission spectra of highly conducting n-GaN - art. no. 045213, PHYS REV B, 6404(4), 2001, pp. 5213

Authors: Paskova, T Valcheva, E Birch, J Tungasmita, S Persson, POA Paskov, PP Evtimova, S Abrashev, M Monemar, B

Citation: T. Paskova et al., Defect and stress relaxation in HVPE-GaN films using high temperature reactively sputtered AlN buffer, J CRYST GR, 230(3-4), 2001, pp. 381-386

Authors: Paskova, T Tungasmita, S Valcheva, E Svedberg, EB Arnaudov, B Evtimova, S Persson, PA Henry, A Beccard, R Heuken, M Monemar, B

Citation: T. Paskova et al., Hydride vapour phase homoepitaxial growth of GaN on MOCVD-grown 'templates', MRS I J N S, 5, 2000, pp. NIL_117-NIL_123

Authors: Arnaudov, B Paskova, T Goldys, EM Yakimova, R Evtimova, S Ivanov, IG Henry, A Monemar, B

Citation: B. Arnaudov et al., Contribution of free-electron recombination to the luminescence spectra ofthick GaN films grown by hydride vapor phase epitaxy, J APPL PHYS, 85(11), 1999, pp. 7888-7892