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Results: 1-9 |
Results: 9
PHYSICIAN AND DIETITIAN PRESCRIBING OF A COMMERCIALLY AVAILABLE ORAL NUTRITIONAL SUPPLEMENT
Authors: STEIGH C GLASSMAN PA FAJARDO F
Citation: C. Steigh et al., PHYSICIAN AND DIETITIAN PRESCRIBING OF A COMMERCIALLY AVAILABLE ORAL NUTRITIONAL SUPPLEMENT, American journal of managed care, 4(4), 1998, pp. 567-572
STRUCTURE OF IETHYL-2'-FURYL-CARBAMOYL)]-2,2,2-TRICHLOROETHANOL
Authors: DURRUTHY O POMES R DAGO A FAJARDO F ROQUE EM AUALVAREZ O
Citation: O. Durruthy et al., STRUCTURE OF IETHYL-2'-FURYL-CARBAMOYL)]-2,2,2-TRICHLOROETHANOL, Boletin de la Sociedad Chilena de Quimica, 42(2), 1997, pp. 217-221
BAND TAILS AND DEFECT DENSITY IN P-TYPE DOPED HYDROGENATED AMORPHOUS-GERMANIUM
Authors: COMEDI D FAJARDO F CHAMBOULEYRON I
Citation: D. Comedi et al., BAND TAILS AND DEFECT DENSITY IN P-TYPE DOPED HYDROGENATED AMORPHOUS-GERMANIUM, Journal of non-crystalline solids, 200, 1996, pp. 399-402
THE PERSPECTIVES OF HYDROGENATED AMORPHOUS-GERMANIUM AS AN ELECTRONICMATERIAL
Authors: CHAMBOULEYRON I GRAEFF CF ZANATTA AR FAJARDO F MULATO M CAMPOMANES R COMEDI D MARQUES FC
Citation: I. Chambouleyron et al., THE PERSPECTIVES OF HYDROGENATED AMORPHOUS-GERMANIUM AS AN ELECTRONICMATERIAL, Physica status solidi. b, Basic research, 192(2), 1995, pp. 241-251
STRUCTURAL AND OPTOELECTRONIC PROPERTIES OF INDIUM-DOPED ALPHA-GE-H THIN-FILMS
Authors: FAJARDO F CHAMBOULEYRON I
Citation: F. Fajardo et I. Chambouleyron, STRUCTURAL AND OPTOELECTRONIC PROPERTIES OF INDIUM-DOPED ALPHA-GE-H THIN-FILMS, Physical review. B, Condensed matter, 52(7), 1995, pp. 4965-4973
PROPERTIES OF GALLIUM-DOPED HYDROGENATED AMORPHOUS-GERMANIUM
Authors: COMEDI D FAJARDO F CHAMBOULEYRON I
Citation: D. Comedi et al., PROPERTIES OF GALLIUM-DOPED HYDROGENATED AMORPHOUS-GERMANIUM, Physical review. B, Condensed matter, 52(7), 1995, pp. 4974-4985
ESTIMATION OF INDIUM-TO-GERMANIUM AND GALLIUM-TO-GERMANIUM SPUTTERINGYIELD RATIOS USING COSPUTTERING DEPOSITION
Authors: COMEDI D FAJARDO F CHAMBOULEYRON I TABACNIKS M
Citation: D. Comedi et al., ESTIMATION OF INDIUM-TO-GERMANIUM AND GALLIUM-TO-GERMANIUM SPUTTERINGYIELD RATIOS USING COSPUTTERING DEPOSITION, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(6), 1994, pp. 3149-3151
INDIUM AND GALLIUM P-TYPE DOPING OF HYDROGENATED AMORPHOUS-GERMANIUM THIN-FILMS
Authors: FAJARDO F COMEDI D CHAMBOULEYRON I
Citation: F. Fajardo et al., INDIUM AND GALLIUM P-TYPE DOPING OF HYDROGENATED AMORPHOUS-GERMANIUM THIN-FILMS, Applied physics letters, 64(24), 1994, pp. 3273-3275
HYDROGENATED AMORPHOUS-GERMANIUM SCHOTTKY-BARRIER DIODES
Authors: FAJARDO F CHAMBOULEYRON I
Citation: F. Fajardo et I. Chambouleyron, HYDROGENATED AMORPHOUS-GERMANIUM SCHOTTKY-BARRIER DIODES, Journal of physics. Condensed matter, 5, 1993, pp. 347-348
Risultati: 1-9 |