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Results: 1-9 |
Results: 9
MULTICOLOR INFRARED DETECTION USING A VOLTAGE TUNABLE BANDPASS FILTER
Authors: TIDROW MZ CHOI KK FARLEY CW CHANG F
Citation: Mz. Tidrow et al., MULTICOLOR INFRARED DETECTION USING A VOLTAGE TUNABLE BANDPASS FILTER, Applied physics letters, 65(23), 1994, pp. 2996-2998
SUPPRESSION OF PARTITION NOISE IN INFRARED HOT-ELECTRON TRANSISTORS
Authors: KUAN CH CHOI KK CHANG WH FARLEY CW CHANG F
Citation: Ch. Kuan et al., SUPPRESSION OF PARTITION NOISE IN INFRARED HOT-ELECTRON TRANSISTORS, Applied physics letters, 64(2), 1994, pp. 238-240
HIGH-BANDWIDTH OEIC RECEIVERS USING HETEROJUNCTION BIPOLAR-TRANSISTORS - DESIGN AND DEMONSTRATION
Authors: PEDROTTI KD PIERSON RL SHENG NH NUBLING RB FARLEY CW CHANG MF
Citation: Kd. Pedrotti et al., HIGH-BANDWIDTH OEIC RECEIVERS USING HETEROJUNCTION BIPOLAR-TRANSISTORS - DESIGN AND DEMONSTRATION, Journal of lightwave technology, 11(10), 1993, pp. 1601-1614
HIGHLY DOPED GALNAS USING DIETHYLBERYLLIUM BY MOCVD FOR INP-BASED HETEROSTRUCTURE BIPOLAR-TRANSISTOR APPLICATIONS
Authors: MCDERMOTT BT SEABURY CW FARLEY CW HIGGINS JA
Citation: Bt. Mcdermott et al., HIGHLY DOPED GALNAS USING DIETHYLBERYLLIUM BY MOCVD FOR INP-BASED HETEROSTRUCTURE BIPOLAR-TRANSISTOR APPLICATIONS, Journal of electronic materials, 22(5), 1993, pp. 555-558
MONOLITHIC OPTICAL INTEGRATED RECEIVERS USING GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
Authors: PEDROTTI KD PIERSON RL FARLEY CW CHANG MF
Citation: Kd. Pedrotti et al., MONOLITHIC OPTICAL INTEGRATED RECEIVERS USING GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS, Microwave journal, 36(5), 1993, pp. 254
MEASUREMENT OF ALUMINUM CONCENTRATION IN EPITAXIAL-FILMS OF ALXGA1-XAS ON (110)-ORIENTED AND (111)-ORIENTED GAAS BY DOUBLE AXIS X-RAY-DIFFRACTOMETRY
Authors: LIND MD FARLEY CW SULLIVAN GJ GRANT RW
Citation: Md. Lind et al., MEASUREMENT OF ALUMINUM CONCENTRATION IN EPITAXIAL-FILMS OF ALXGA1-XAS ON (110)-ORIENTED AND (111)-ORIENTED GAAS BY DOUBLE AXIS X-RAY-DIFFRACTOMETRY, Journal of applied physics, 74(9), 1993, pp. 5910-5912
BASE RECOMBINATION IN HIGH-PERFORMANCE INGAAS INP HBTS/
Authors: SEABURY CW FARLEY CW MCDERMOTT BT HIGGINS JA LIN CL KIRCHNER PJ WOODALL JM GEE RC
Citation: Cw. Seabury et al., BASE RECOMBINATION IN HIGH-PERFORMANCE INGAAS INP HBTS/, I.E.E.E. transactions on electron devices, 40(11), 1993, pp. 2123-2124
INP INGAAS DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS INCORPORATING CARBON-DOPED BASES AND SUPERLATTICE GRADED BASE-COLLECTOR JUNCTIONS/
Authors: GEE RC LIN CL FARLEY CW SEABURY CW HIGGINS JA KIRCHNER PD WOODALL JM ASBECK PM
Citation: Rc. Gee et al., INP INGAAS DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS INCORPORATING CARBON-DOPED BASES AND SUPERLATTICE GRADED BASE-COLLECTOR JUNCTIONS/, Electronics Letters, 29(10), 1993, pp. 850-851
LOW DARK CURRENT INFRARED HOT-ELECTRON TRANSISTOR FOR 77-K OPERATION
Authors: CHOI KK TIDROW MZ TAYSINGLARA M CHANG WH KUAN CH FARLEY CW CHANG F
Citation: Kk. Choi et al., LOW DARK CURRENT INFRARED HOT-ELECTRON TRANSISTOR FOR 77-K OPERATION, Applied physics letters, 63(7), 1993, pp. 908-910
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