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Results: 1-9 |
Results: 9
MEASUREMENTS OF LOCAL STRAIN VARIATION IN SI1-XGEX SI HETEROSTRUCTURES/
Authors: BELL LD KAISER WJ MANION SJ MILLIKEN AM PIKE WT FATHAUER RW
Citation: Ld. Bell et al., MEASUREMENTS OF LOCAL STRAIN VARIATION IN SI1-XGEX SI HETEROSTRUCTURES/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(4), 1995, pp. 1602-1607
BALLISTIC-ELECTRON-EMISSION MICROSCOPY OF STRAIN NONUNIFORMITIES IN SI1-XGEX SI STRUCTURES/
Authors: BELL LD KAISER WJ MANION SJ MILLIKEN AM FATHAUER RW PIKE WT
Citation: Ld. Bell et al., BALLISTIC-ELECTRON-EMISSION MICROSCOPY OF STRAIN NONUNIFORMITIES IN SI1-XGEX SI STRUCTURES/, Physical review. B, Condensed matter, 52(16), 1995, pp. 12081-12089
BLOCKING INJECTED DARK CURRENT IN IMPURITY-BAND-CONDUCTION PHOTODETECTORS USING A PTSI SCHOTTKY-BARRIER
Authors: MARTIN BG FATHAUER RW JONES EW KRABACH TN DEJEWSKI SM
Citation: Bg. Martin et al., BLOCKING INJECTED DARK CURRENT IN IMPURITY-BAND-CONDUCTION PHOTODETECTORS USING A PTSI SCHOTTKY-BARRIER, Applied physics letters, 67(6), 1995, pp. 774-776
BALLISTIC-ELECTRON-EMISSION MICROSCOPY OF STRAINED SI1-XGEX LAYERS
Authors: BELL LD MILLIKEN AM MANION SJ KAISER WJ FATHAUER RW PIKE WT
Citation: Ld. Bell et al., BALLISTIC-ELECTRON-EMISSION MICROSCOPY OF STRAINED SI1-XGEX LAYERS, Physical review. B, Condensed matter, 50(11), 1994, pp. 8082-8085
MICROSTRUCTURE AND LIGHT-EMISSION IN STAIN-ETCHED SI1-XGEX ALLOYS
Authors: PIKE WT KSENDZOV A FATHAUER RW GEORGE T
Citation: Wt. Pike et al., MICROSTRUCTURE AND LIGHT-EMISSION IN STAIN-ETCHED SI1-XGEX ALLOYS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(4), 1993, pp. 1401-1406
NOVEL SI-BASED SUPERLATTICES CONSISTING OF ALTERNATING LAYERS OF CRYSTALLINE SI AND POROUS AMORPHOUS SI1-XGEX ALLOYS
Authors: FATHAUER RW GEORGE T JONES EW PIKE WT KSENDZOV A VASQUEZ RP
Citation: Rw. Fathauer et al., NOVEL SI-BASED SUPERLATTICES CONSISTING OF ALTERNATING LAYERS OF CRYSTALLINE SI AND POROUS AMORPHOUS SI1-XGEX ALLOYS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(4), 1993, pp. 1518-1520
CHARACTERIZING HOT-CARRIER TRANSPORT IN SILICON HETEROSTRUCTURES WITHTHE USE OF BALLISTIC-ELECTRON-EMISSION MICROSCOPY
Authors: BELL LD MANION SJ HECHT MH KAISER WJ FATHAUER RW MILLIKEN AM
Citation: Ld. Bell et al., CHARACTERIZING HOT-CARRIER TRANSPORT IN SILICON HETEROSTRUCTURES WITHTHE USE OF BALLISTIC-ELECTRON-EMISSION MICROSCOPY, Physical review. B, Condensed matter, 48(8), 1993, pp. 5712-5715
VISIBLE PHOTOLUMINESCENCE OF POROUS SI1-XGEX OBTAINED BY STAIN ETCHING
Authors: KSENDZOV A FATHAUER RW GEORGE T PIKE WT VASQUEZ RP TAYLOR AP
Citation: A. Ksendzov et al., VISIBLE PHOTOLUMINESCENCE OF POROUS SI1-XGEX OBTAINED BY STAIN ETCHING, Applied physics letters, 63(2), 1993, pp. 200-202
LONG-WAVELENGTH PTSI INFRARED DETECTORS FABRICATED BY INCORPORATING AP-BEAM EPITAXY( DOPING SPIKE GROWN BY MOLECULAR)
Authors: LIN TL PARK JS GEORGE T JONES EW FATHAUER RW MASERJIAN J
Citation: Tl. Lin et al., LONG-WAVELENGTH PTSI INFRARED DETECTORS FABRICATED BY INCORPORATING AP-BEAM EPITAXY( DOPING SPIKE GROWN BY MOLECULAR), Applied physics letters, 62(25), 1993, pp. 3318-3320
Risultati: 1-9 |