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Results: 1-25 | 26-50 | 51-61
Results: 1-25/61
PHOTOVOLTAIC DEVICE APPLICATIONS OF POROUS MICROCRYSTALLINE SILICON
Authors: DUTTAGUPTA SP FAUCHET PM RIBES AC TIEDJE HF DAMASKINOS S DIXON TE BRODIE DE KURINEC SK
Citation: Sp. Duttagupta et al., PHOTOVOLTAIC DEVICE APPLICATIONS OF POROUS MICROCRYSTALLINE SILICON, Solar energy materials and solar cells, 52(3-4), 1998, pp. 271-283
SPATIOTEMPORAL SHAPING OF HALF-CYCLE TERAHERTZ PULSES BY DIFFRACTION THROUGH CONDUCTIVE APERTURES OF FINITE THICKNESS
Authors: BROMAGE J RADIC S AGRAWAL GP STROUD CR FAUCHET PM SOBOLEWSKI R
Citation: J. Bromage et al., SPATIOTEMPORAL SHAPING OF HALF-CYCLE TERAHERTZ PULSES BY DIFFRACTION THROUGH CONDUCTIVE APERTURES OF FINITE THICKNESS, Journal of the Optical Society of America. B, Optical physics, 15(7), 1998, pp. 1953-1959
SPATIOTEMPORAL SHAPING OF HALF-CYCLE TERAHERTZ PULSES BY DIFFRACTION THROUGH CONDUCTIVE APERTURES OF FINITE THICKNESS
Authors: BROMAGE J RADIC S AGRAWAL GP STROUD CR FAUCHET PM SOBOLEWSKI R
Citation: J. Bromage et al., SPATIOTEMPORAL SHAPING OF HALF-CYCLE TERAHERTZ PULSES BY DIFFRACTION THROUGH CONDUCTIVE APERTURES OF FINITE THICKNESS, Journal of the Optical Society of America. B, Optical physics, 15(4), 1998, pp. 1399-1405
QUANTUM CONFINEMENT IN NANOSCALE SILICON - THE CORRELATION OF SIZE WITH BANDGAP AND LUMINESCENCE
Authors: VONBEHREN J VANBUUREN T ZACHARIAS M CHIMOWITZ EH FAUCHET PM
Citation: J. Vonbehren et al., QUANTUM CONFINEMENT IN NANOSCALE SILICON - THE CORRELATION OF SIZE WITH BANDGAP AND LUMINESCENCE, Solid state communications, 105(5), 1998, pp. 317-322
POROUS SILICON PHYSICS AND DEVICE APPLICATIONS - A STATUS-REPORT
Authors: FAUCHET PM VONBEHREN J HIRSCHMAN KD TSYBESKOV L DUTTAGUPTA SP
Citation: Pm. Fauchet et al., POROUS SILICON PHYSICS AND DEVICE APPLICATIONS - A STATUS-REPORT, Physica status solidi. a, Applied research, 165(1), 1998, pp. 3-13
FABRICATION OF NANOCRYSTALLINE SILICON SUPERLATTICES BY CONTROLLED THERMAL RECRYSTALLIZATION
Authors: TSYBESKOV L HIRSCHMAN KD DUTTAGUPTA SP FAUCHET PM ZACHARIAS M MCCAFFREY JP LOCKWOOOD DJ
Citation: L. Tsybeskov et al., FABRICATION OF NANOCRYSTALLINE SILICON SUPERLATTICES BY CONTROLLED THERMAL RECRYSTALLIZATION, Physica status solidi. a, Applied research, 165(1), 1998, pp. 69-77
LIGHT-EMISSION FROM GE AND GEO2 NANOCRYSTALS
Authors: ZACHARIAS M FAUCHET PM
Citation: M. Zacharias et Pm. Fauchet, LIGHT-EMISSION FROM GE AND GEO2 NANOCRYSTALS, Journal of non-crystalline solids, 230, 1998, pp. 1058-1062
NANOCRYSTALLINE SILICON SUPERLATTICES - FABRICATION AND CHARACTERIZATION
Authors: ZACHARIAS M TSYBESKOV L HIRSCHMAN KD FAUCHET PM BLASING J KOHLERT P VEIT P
Citation: M. Zacharias et al., NANOCRYSTALLINE SILICON SUPERLATTICES - FABRICATION AND CHARACTERIZATION, Journal of non-crystalline solids, 230, 1998, pp. 1132-1136
VERY LARGE CONTINUOUS-WAVE-LASER-INDUCED OPTICAL-ABSORPTION IN POROUSSILICON FILMS - EVIDENCE FOR THERMAL EFFECTS
Authors: KOYAMA H FAUCHET PM
Citation: H. Koyama et Pm. Fauchet, VERY LARGE CONTINUOUS-WAVE-LASER-INDUCED OPTICAL-ABSORPTION IN POROUSSILICON FILMS - EVIDENCE FOR THERMAL EFFECTS, Applied physics letters, 73(22), 1998, pp. 3259-3261
NANOCRYSTALLINE-SILICON SUPERLATTICE PRODUCED BY CONTROLLED RECRYSTALLIZATION
Authors: TSYBESKOV L HIRSCHMAN KD DUTTAGUPTA SP ZACHARIAS M FAUCHET PM MCCAFFREY JP LOCKWOOD DJ
Citation: L. Tsybeskov et al., NANOCRYSTALLINE-SILICON SUPERLATTICE PRODUCED BY CONTROLLED RECRYSTALLIZATION, Applied physics letters, 72(1), 1998, pp. 43-45
YBA2CU3O7-X THIN-FILM PICOSECOND PHOTORESPONSE IN THE RESISTIVE STATE
Authors: LINDGREN M CURRIE M WILLIAMS C HSIANG TY FAUCHET PM SOBOLEWSKI R MOFFAT SH HUGHES RA PRESTON JS HEGMANN FA
Citation: M. Lindgren et al., YBA2CU3O7-X THIN-FILM PICOSECOND PHOTORESPONSE IN THE RESISTIVE STATE, IEEE transactions on applied superconductivity, 7(2), 1997, pp. 3422-3425
CRITICAL-BEHAVIOR AND THE PROCESSING OF NANOSCALE POROUS MATERIALS
Authors: VONBEHREN J CHIMOWITZ EH FAUCHET PM
Citation: J. Vonbehren et al., CRITICAL-BEHAVIOR AND THE PROCESSING OF NANOSCALE POROUS MATERIALS, Advanced materials, 9(11), 1997, pp. 921
THE STRONG VISIBLE LUMINESCENCE IN POROUS SILICON - QUANTUM CONFINEMENT, NOT OXIDE-RELATED DEFECTS
Authors: FAUCHET PM VONBEHREN J
Citation: Pm. Fauchet et J. Vonbehren, THE STRONG VISIBLE LUMINESCENCE IN POROUS SILICON - QUANTUM CONFINEMENT, NOT OXIDE-RELATED DEFECTS, Physica status solidi. b, Basic research, 204(1), 1997, pp. 7-8
SPATIOTEMPORAL SHAPING OF TERAHERTZ PULSES
Authors: BROMAGE J RADIC S AGRAWAL GP STROUD CR FAUCHET PM SOBOLEWSKI R
Citation: J. Bromage et al., SPATIOTEMPORAL SHAPING OF TERAHERTZ PULSES, Optics letters, 22(9), 1997, pp. 627-629
STABLE PHOTOLUMINESCENCE AND ELECTROLUMINESCENCE FROM POROUS SILICON
Authors: FAUCHET PM TSYBESKOV L DUTTAGUPTA SP HIRSCHMAN KD
Citation: Pm. Fauchet et al., STABLE PHOTOLUMINESCENCE AND ELECTROLUMINESCENCE FROM POROUS SILICON, Thin solid films, 297(1-2), 1997, pp. 254-260
MICROHARDNESS OF POROUS SILICON FILMS AND COMPOSITES
Authors: DUTTAGUPTA SP CHEN XL JENEKHE SA FAUCHET PM
Citation: Sp. Duttagupta et al., MICROHARDNESS OF POROUS SILICON FILMS AND COMPOSITES, Solid state communications, 101(1), 1997, pp. 33-37
LUMINESCENCE FROM POROUS SILICON - MECHANISM DEBATED - REPLY
Authors: COLLINS RT FAUCHET PM TISCHLER MA
Citation: Rt. Collins et al., LUMINESCENCE FROM POROUS SILICON - MECHANISM DEBATED - REPLY, Physics today, 50(8), 1997, pp. 83-83
POROUS SILICON - FROM LUMINESCENCE TO LEDS
Authors: COLLINS RT FAUCHET PM TISCHLER MA
Citation: Rt. Collins et al., POROUS SILICON - FROM LUMINESCENCE TO LEDS, Physics today, 50(1), 1997, pp. 24-31
BLUE LUMINESCENCE IN FILMS CONTAINING GE AND GEO2 NANOCRYSTALS - THE ROLE OF DEFECTS
Authors: ZACHARIAS M FAUCHET PM
Citation: M. Zacharias et Pm. Fauchet, BLUE LUMINESCENCE IN FILMS CONTAINING GE AND GEO2 NANOCRYSTALS - THE ROLE OF DEFECTS, Applied physics letters, 71(3), 1997, pp. 380-382
ROOM-TEMPERATURE PHOTOLUMINESCENCE AND ELECTROLUMINESCENCE FROM ER-DOPED SILICON-RICH SILICON-OXIDE
Authors: TSYBESKOV L DUTTAGUPTA SP HIRSCHMAN KD FAUCHET PM MOORE KL HALL DG
Citation: L. Tsybeskov et al., ROOM-TEMPERATURE PHOTOLUMINESCENCE AND ELECTROLUMINESCENCE FROM ER-DOPED SILICON-RICH SILICON-OXIDE, Applied physics letters, 70(14), 1997, pp. 1790-1792
ULTRAFAST PHOTORESPONSE IN MICROBRIDGES AND PULSE-PROPAGATION IN TRANSMISSION-LINES MADE FROM HIGH-T-C SUPERCONDUCTING Y-BA-CU-O THIN-FILMS
Authors: LINDGREN M CURRIE M WILLIAMS CA HSIANG TY FAUCHET PM SOBOLEWSKI R MOFFAT SH HUGHES RA PRESTON JS HEGMANN FA
Citation: M. Lindgren et al., ULTRAFAST PHOTORESPONSE IN MICROBRIDGES AND PULSE-PROPAGATION IN TRANSMISSION-LINES MADE FROM HIGH-T-C SUPERCONDUCTING Y-BA-CU-O THIN-FILMS, IEEE journal of selected topics in quantum electronics, 2(3), 1996, pp. 668-678
INTRINSIC BAND-EDGE PHOTOLUMINESCENCE FROM SILICON CLUSTERS AT ROOM-TEMPERATURE
Authors: TSYBESKOV L MOORE KL HALL DG FAUCHET PM
Citation: L. Tsybeskov et al., INTRINSIC BAND-EDGE PHOTOLUMINESCENCE FROM SILICON CLUSTERS AT ROOM-TEMPERATURE, Physical review. B, Condensed matter, 54(12), 1996, pp. 8361-8364
SILICON-BASED VISIBLE LIGHT-EMITTING DEVICES INTEGRATED INTO MICROELECTRONIC CIRCUITS
Authors: HIRSCHMAN KD TSYBESKOV L DUTTAGUPTA SP FAUCHET PM
Citation: Kd. Hirschman et al., SILICON-BASED VISIBLE LIGHT-EMITTING DEVICES INTEGRATED INTO MICROELECTRONIC CIRCUITS, Nature, 384(6607), 1996, pp. 338-341
THE FEMTOSECOND OPTICAL-RESPONSE OF POROUS, AMORPHOUS AND CRYSTALLINESILICON
Authors: VONBEHREN J KOSTOULAS Y UCER KB FAUCHET PM
Citation: J. Vonbehren et al., THE FEMTOSECOND OPTICAL-RESPONSE OF POROUS, AMORPHOUS AND CRYSTALLINESILICON, Journal of non-crystalline solids, 200, 1996, pp. 957-960
ULTRAFAST EXCITATION AND DEEXCITATION OF THE SI-H STRETCHING MODE IN A-SI-H
Authors: XU Z FAUCHET PM RELLA CW SCHWETTMAN HA TSAI CC
Citation: Z. Xu et al., ULTRAFAST EXCITATION AND DEEXCITATION OF THE SI-H STRETCHING MODE IN A-SI-H, Journal of non-crystalline solids, 200, 1996, pp. 11-14
Risultati: 1-25 | 26-50 | 51-61