Authors:
HAMMEL E
CHALUPKA A
FEGERL J
FISCHER R
LAMMER G
LOSCHNER H
MALEK L
NOWAK R
STENGL G
VONACH H
WOLF P
BRUNGER WH
BUCHMANN LM
TORKLER M
CEKAN E
FALLMANN W
PASCHKE F
STANGL G
THALINGER F
BERRY IL
HARRIOTT LR
FINKELSTEIN W
HILL RW
Citation: E. Hammel et al., EXPERIMENTAL INVESTIGATION OF STOCHASTIC SPACE-CHARGE EFFECTS ON PATTERN RESOLUTION IN ION PROJECTION LITHOGRAPHY SYSTEMS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(6), 1994, pp. 3533-3538
Authors:
LOSCHNER H
STENGL G
CHALUPKA A
FEGERL J
FISCHER R
HAMMEL E
LAMMER G
MALEK L
NOWAK R
TRAHER C
VONACH H
WOLF P
HILL RW
Citation: H. Loschner et al., PROJECTION ION-BEAM LITHOGRAPHY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(6), 1993, pp. 2409-2415
Authors:
LOSCHNER H
STENGL G
CHALUPKA A
FEGERL J
FISCHER R
LAMMER G
MALEK L
NOWAK R
TRAHER C
WOLF P
Citation: H. Loschner et al., ION PROJECTION LITHOGRAPHY FOR VACUUM MICROELECTRONICS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(2), 1993, pp. 487-492
Authors:
STENGL G
BOSCH G
CHALUPKA A
FEGERL J
FISCHER R
LAMMER G
LOSCHNER H
MALEK L
NOWAK R
TRAHER C
WOLF P
Citation: G. Stengl et al., ION PROJECTOR DISTORTION STABILITY AND WAFER EXPOSURES UNDER ELECTRONIC ALIGNMENT (PATTERN LOCK) CONDITIONS, Microelectronic engineering, 21(1-4), 1993, pp. 187-190