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Authors: HAMMEL E CHALUPKA A FEGERL J FISCHER R LAMMER G LOSCHNER H MALEK L NOWAK R STENGL G VONACH H WOLF P BRUNGER WH BUCHMANN LM TORKLER M CEKAN E FALLMANN W PASCHKE F STANGL G THALINGER F BERRY IL HARRIOTT LR FINKELSTEIN W HILL RW
Citation: E. Hammel et al., EXPERIMENTAL INVESTIGATION OF STOCHASTIC SPACE-CHARGE EFFECTS ON PATTERN RESOLUTION IN ION PROJECTION LITHOGRAPHY SYSTEMS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(6), 1994, pp. 3533-3538

Authors: LOSCHNER H STENGL G CHALUPKA A FEGERL J FISCHER R HAMMEL E LAMMER G MALEK L NOWAK R TRAHER C VONACH H WOLF P HILL RW
Citation: H. Loschner et al., PROJECTION ION-BEAM LITHOGRAPHY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(6), 1993, pp. 2409-2415

Authors: LOSCHNER H STENGL G CHALUPKA A FEGERL J FISCHER R LAMMER G MALEK L NOWAK R TRAHER C WOLF P
Citation: H. Loschner et al., ION PROJECTION LITHOGRAPHY FOR VACUUM MICROELECTRONICS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(2), 1993, pp. 487-492

Authors: STENGL G BOSCH G CHALUPKA A FEGERL J FISCHER R LAMMER G LOSCHNER H MALEK L NOWAK R TRAHER C WOLF P
Citation: G. Stengl et al., ION PROJECTOR DISTORTION STABILITY AND WAFER EXPOSURES UNDER ELECTRONIC ALIGNMENT (PATTERN LOCK) CONDITIONS, Microelectronic engineering, 21(1-4), 1993, pp. 187-190
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