Authors: KARPOVICH IA ANSHON AV FILATOV DO

Citation: Ia. Karpovich et al., FORMATION AND PASSIVATION OF DEFECTS IN HETEROSTRUCTURES WITH STRAINED GAAS INGAAS QUANTUM-WELLS AS A RESULT OF TREATMENT IN A HYDROGEN PLASMA/, Semiconductors (Woodbury, N.Y.), 32(9), 1998, pp. 975-979

Authors: ALESHKIN VY ZVONKOV BN MALKINA IG SAFYANOV YN CHERNOV AL FILATOV DO

Citation: Vy. Aleshkin et al., POLARIZATION OF INPLANE PHOTOLUMINESCENCE FROM INAS GA(IN)AS QUANTUM-WELL LAYERS GROWN BY METALLORGANIC VAPOR-PHASE EPITAXY/, Semiconductors (Woodbury, N.Y.), 32(10), 1998, pp. 1119-1124

Authors: ZVONKOV BN MALKINA IG LINKOVA ER ALESHKIN VY KARPOVICH IA FILATOV DO

Citation: Bn. Zvonkov et al., PHOTOELECTRIC PROPERTIES OF GAAS INAS HETEROSTRUCTURES WITH QUANTUM DOTS/, Semiconductors, 31(9), 1997, pp. 941-946

Authors: KARPOVICH IA FILATOV DO

Citation: Ia. Karpovich et Do. Filatov, DIAGNOSTICS OF HETEROSTRUCTURES WITH QUANTUM-WELLS BY THE METHOD OF CAPACITIVE PHOTOVOLTAGE SPECTROSCOPY, Semiconductors, 30(10), 1996, pp. 913-917