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Citation: Ri. Hegde et al., A LOW-TEMPERATURE COLLIMATED TITANIUM DEPOSITION PROCESS, Journal of the Electrochemical Society, 144(5), 1997, pp. 1849-1854

Authors: FIORDALICE RW HEGDE RI KAWASAKI H

Citation: Rw. Fiordalice et al., ORIENTATION CONTROL OF CHEMICAL-VAPOR-DEPOSITION TIN FILM FOR BARRIERAPPLICATIONS, Journal of the Electrochemical Society, 143(6), 1996, pp. 2059-2063

Authors: HEGDE RI FIORDALICE RW TRAVIS EO TOBIN PJ

Citation: Ri. Hegde et al., THIN-FILM PROPERTIES OF LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION TIN BARRIER FOR ULTRA-LARGE-SCALE INTEGRATION APPLICATIONS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(4), 1993, pp. 1287-1296

Authors: TRAVIS EO FIORDALICE RW

Citation: Eo. Travis et Rw. Fiordalice, MANUFACTURING ASPECTS OF LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITED TIN BARRIER LAYERS, Thin solid films, 236(1-2), 1993, pp. 325-329

Authors: HEGDE RI FIORDALICE RW TOBIN PJ

Citation: Ri. Hegde et al., TINCL FORMATION DURING LOW-TEMPERATURE, LOW-PRESSURE CHEMICAL-VAPOR DEPOSITION OF TIN, Applied physics letters, 62(19), 1993, pp. 2326-2328