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Authors: SIEG RM RINGEL SA TING SM SAMAVEDAM SB CURRIE M LANGDO T FITZGERALD EA
Citation: Rm. Sieg et al., TOWARD DEVICE-QUALITY GAAS GROWTH BY MOLECULAR-BEAM EPITAXY ON OFFCUTGE SI1-XGEX/SI SUBSTRATES/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1471-1474

Authors: FITZGERALD EA KIMERLING LC
Citation: Ea. Fitzgerald et Lc. Kimerling, SILICON-BASED MICROPHOTONICS AND INTEGRATED OPTOELECTRONICS, MRS bulletin, 23(4), 1998, pp. 39-47

Authors: XU Q HSU JWP TING SM FITZGERALD EA SIEG RM RINGEL SA
Citation: Q. Xu et al., SCANNING FORCE MICROSCOPY STUDIES OF GAAS FILMS GROWN ON OFFCUT GE SUBSTRATES, Journal of electronic materials, 27(9), 1998, pp. 1010-1016

Authors: SIEG RM RINGEL SA TING SM FITZGERALD EA SACKS RN
Citation: Rm. Sieg et al., ANTIPHASE DOMAIN-FREE GROWTH OF GAAS ON OFFCUT (001)GE WAFERS BY MOLECULAR-BEAM EPITAXY WITH SUPPRESSED GE OUTDIFFUSION, Journal of electronic materials, 27(7), 1998, pp. 900-907

Authors: TING SM FITZGERALD EA SIEG RM RINGEL SA
Citation: Sm. Ting et al., RANGE OF DEFECT MORPHOLOGIES ON GAAS GROWN ON OFFCUT (001)GE SUBSTRATES, Journal of electronic materials, 27(5), 1998, pp. 451-461

Authors: WATSON GP BENTON JL XIE YH FITZGERALD EA
Citation: Gp. Watson et al., INFLUENCE OF MISFIT DISLOCATION INTERACTIONS ON PHOTOLUMINESCENCE SPECTRA OF SIGE ON PATTERNED SI, Journal of applied physics, 83(7), 1998, pp. 3773-3776

Authors: BULSARA MT YANG V THILDERKVIST A FITZGERALD EA HAUSLER K EBERL K
Citation: Mt. Bulsara et al., GRADED INXGA1-XAS GAAS 1.3 MU-M WAVELENGTH LIGHT-EMITTING DIODE STRUCTURES GROWN WITH MOLECULAR-BEAM EPITAXY/, Journal of applied physics, 83(1), 1998, pp. 592-599

Authors: SIEG RM CARLIN JA BOECKL JJ RINGEL SA CURRIE MT TING SM LANGDO TA TARASCHI G FITZGERALD EA KEYES BM
Citation: Rm. Sieg et al., HIGH MINORITY-CARRIER LIFETIMES IN GAAS GROWN ON LOW-DEFECT-DENSITY GE GESI/SI SUBSTRATES/, Applied physics letters, 73(21), 1998, pp. 3111-3113

Authors: SAMAVEDAM SB CURRIE MT LANGDO TA FITZGERALD EA
Citation: Sb. Samavedam et al., HIGH-QUALITY GERMANIUM PHOTODIODES INTEGRATED ON SILICON SUBSTRATES USING OPTIMIZED RELAXED GRADED BUFFERS, Applied physics letters, 73(15), 1998, pp. 2125-2127

Authors: CURRIE MT SAMAVEDAM SB LANGDO TA LEITZ CW FITZGERALD EA
Citation: Mt. Currie et al., CONTROLLING THREADING DISLOCATION DENSITIES IN GE ON SI USING GRADED SIGE LAYERS AND CHEMICAL-MECHANICAL POLISHING, Applied physics letters, 72(14), 1998, pp. 1718-1720

Authors: BULSARA MT LEITZ C FITZGERALD EA
Citation: Mt. Bulsara et al., RELAXED INXGA1-XAS GRADED BUFFERS GROWN WITH ORGANOMETALLIC VAPOR-PHASE EPITAXY ON GAAS, Applied physics letters, 72(13), 1998, pp. 1608-1610

Authors: FITZGERALD EA SAMAVEDAM SB XIE YH GIOVANE LM
Citation: Ea. Fitzgerald et al., INFLUENCE OF STRAIN ON SEMICONDUCTOR THIN-FILM EPITAXY, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(3), 1997, pp. 1048-1056

Authors: FITZGERALD EA SAMAVEDAM SB
Citation: Ea. Fitzgerald et Sb. Samavedam, LINE, POINT AND SURFACE DEFECT MORPHOLOGY OF GRADED, RELAXED GESI ALLOYS ON SI SUBSTRATES, Thin solid films, 294(1-2), 1997, pp. 3-10

Authors: TAFFS RE CHERNOKHVOSTOVA YV DRAGUNSKY EM NOMURA T HIOKI K BEUVERY EC FITZGERALD EA LEVENBOOK IS ASH DM
Citation: Re. Taffs et al., INACTIVATED POLIOVIRUS VACCINE PROTECTS TRANSGENIC POLIOVIRUS RECEPTOR MICE AGAINST TYPE-3 POLIOVIRUS CHALLENGE, The Journal of infectious diseases, 175(2), 1997, pp. 441-444

Authors: SAMAVEDAM SB FITZGERALD EA
Citation: Sb. Samavedam et Ea. Fitzgerald, NOVEL DISLOCATION-STRUCTURE AND SURFACE-MORPHOLOGY EFFECTS IN RELAXEDGE SI-GE(GRADED)/SI STRUCTURES/, Journal of applied physics, 81(7), 1997, pp. 3108-3116

Authors: FITZGERALD EA PURCELL SM GOLDMAN HM
Citation: Ea. Fitzgerald et al., GREEN HAIR DISCOLORATION DUE TO SELENIUM SULFIDE, International journal of dermatology, 36(3), 1997, pp. 238-239

Authors: XIE YH SAMAVEDAM SB BULSARA M LANGDO TA FITZGERALD EA
Citation: Yh. Xie et al., RELAXED TEMPLATE FOR FABRICATING REGULARLY DISTRIBUTED QUANTUM-DOT ARRAYS, Applied physics letters, 71(24), 1997, pp. 3567-3568

Authors: GRILLOT PN RINGEL SA FITZGERALD EA
Citation: Pn. Grillot et al., EFFECT OF COMPOSITION ON DEEP LEVELS IN HETEROEPITAXIAL GEXS1-X LAYERS AND EVIDENCE FOR DOMINANT INTRINSIC RECOMBINATION-GENERATION IN RELAXED GE LAYERS ON SI, Journal of electronic materials, 25(7), 1996, pp. 1028-1036

Authors: FITZGERALD EA PURCELL SM KANTOR GR GOLDMAN HM
Citation: Ea. Fitzgerald et al., ROWELLS SYNDROME - REPORT OF A CASE, Journal of the American Academy of Dermatology, 35(5), 1996, pp. 801-803

Authors: GRILLOT PN RINGEL SA MICHEL J FITZGERALD EA
Citation: Pn. Grillot et al., STRUCTURAL, ELECTRONIC, AND LUMINESCENCE INVESTIGATION OF STRAIN-RELAXATION INDUCED ELECTRICAL-CONDUCTIVITY TYPE CONVERSION IN GESI SI HETEROSTRUCTURES/, Journal of applied physics, 80(5), 1996, pp. 2823-2832

Authors: HSU JWP FITZGERALD EA XIE YH SILVERMAN PJ
Citation: Jwp. Hsu et al., STUDIES OF ELECTRICALLY ACTIVE DEFECTS IN RELAXED GESI FILMS USING A NEAR-FIELD SCANNING OPTICAL MICROSCOPE, Journal of applied physics, 79(10), 1996, pp. 7743-7750

Authors: HSU JWP FITZGERALD EA XIE YH SILVERMAN PJ
Citation: Jwp. Hsu et al., NEAR-FIELD SCANNING OPTICAL MICROSCOPY IMAGING OF INDIVIDUAL THREADING DISLOCATIONS ON RELAXED GEXSI1-X FILMS, Zoological studies, 34, 1995, pp. 204-206

Authors: XIE YH FITZGERALD EA SILVERMAN PJ
Citation: Yh. Xie et al., FABRICATION AND APPLICATION OF RELAXED BUFFER LAYERS, Materials science & engineering. B, Solid-state materials for advanced technology, 30(2-3), 1995, pp. 201-203

Authors: FITZGERALD EA
Citation: Ea. Fitzgerald, GESI SI NANOSTRUCTURES, Annual review of materials science, 25, 1995, pp. 417-454

Authors: JONES DE PELZ JP XIE YH SILVERMAN PJ FITZGERALD EA
Citation: De. Jones et al., SCANNING-TUNNELING-MICROSCOPY STUDY OF CLEANING PROCEDURES FOR SIGE(001) SURFACES, Surface science, 341(1-2), 1995, pp. 1005-1010
Risultati: 1-25 | 26-41