Authors:
FLEMING JG
ROHERTYOSMUN E
SMITH PM
CUSTER JS
KIM YD
KACSICH T
NICOLET MA
GALEWSKI CJ
Citation: Jg. Fleming et al., GROWTH AND PROPERTIES OF W-SI-N DIFFUSION-BARRIERS DEPOSITED BY CHEMICAL-VAPOR-DEPOSITION, Thin solid films, 320(1), 1998, pp. 10-14
Authors:
FLEMING JG
OHLBERG DAA
FELTER T
MALINOWSKI M
Citation: Jg. Fleming et al., FABRICATION AND TESTING OF VERTICAL METAL EDGE EMITTERS WITH WELL-DEFINED GATE TO EMITTER SEPARATION, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(3), 1996, pp. 1958-1962
Citation: Rw. Cheek et al., IN-SITU MONITORING OF THE PRODUCTS FROM THE SIH4-VAPOR-DEPOSITION PROCESS BY MICROVOLUME MOSS SPECTROMETRY(WF6 TUNGSTEN CHEMICAL), Journal of the Electrochemical Society, 140(12), 1993, pp. 3588-3590