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Results:
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Results: 2
ULTRAHIGH VACUUM-SCANNING TUNNELING MICROSCOPY NANOFABRICATION AND HYDROGEN DEUTERIUM DESORPTION FROM SILICON SURFACES - IMPLICATIONS FOR COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR TECHNOLOGY/
Authors:
LYDING JW HESS K ABELN GC THOMPSON DS MOORE JS HERSAM MC FOLEY ET LEE J CHEN Z HWANG ST CHOI H AVOURIS P KIZILYALLI IC
Citation:
Jw. Lyding et al., ULTRAHIGH VACUUM-SCANNING TUNNELING MICROSCOPY NANOFABRICATION AND HYDROGEN DEUTERIUM DESORPTION FROM SILICON SURFACES - IMPLICATIONS FOR COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR TECHNOLOGY/, Applied surface science, 132, 1998, pp. 221-230
CRYOGENIC UHV-STM STUDY OF HYDROGEN AND DEUTERIUM DESORPTION FROM SI(100)
Authors:
FOLEY ET KAM AF LYDING JW AVOURIS P
Citation:
Et. Foley et al., CRYOGENIC UHV-STM STUDY OF HYDROGEN AND DEUTERIUM DESORPTION FROM SI(100), Physical review letters, 80(6), 1998, pp. 1336-1339
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