Authors: FACCIO F BIANCHI M FORNASARI M HEIJNE EHM JARRON P ROSSI G BOREL G REDOLFI J

Citation: F. Faccio et al., NOISE CHARACTERIZATION OF TRANSISTORS IN A 1.2-MU-M CMOS SOI TECHNOLOGY UP TO A TOTAL-DOSE OF 12-MRAD-(SI), IEEE transactions on nuclear science, 41(6), 1994, pp. 2310-2316