AAAAAA

   
Results: 1-10 |
Results: 10
STRAIN-INDUCED MODIFICATIONS OF THE BAND-STRUCTURE OF INXGA1-XP-IN0.5AL0.5P MULTIPLE-QUANTUM WELLS
Authors: INTERHOLZINGER K PATEL D MENONI CS THIAGARAJAN P ROBINSON GY FOUQUET JE
Citation: K. Interholzinger et al., STRAIN-INDUCED MODIFICATIONS OF THE BAND-STRUCTURE OF INXGA1-XP-IN0.5AL0.5P MULTIPLE-QUANTUM WELLS, IEEE journal of quantum electronics, 34(1), 1998, pp. 93-100
COMPOSITIONAL DEPENDENCE OF THE LUMINESCENCE OF IN-0.49(ALYGA1-Y)(0.51)P ALLOYS NEAR THE DIRECT-INDIRECT BAND-GAP CROSSOVER
Authors: NELSON JS JONES ED MYERS SM FOLLSTAEDT DM HJALMARSON HP SCHIRBER JE SCHNEIDER RP FOUQUET JE ROBBINS VM CAREY KW
Citation: Js. Nelson et al., COMPOSITIONAL DEPENDENCE OF THE LUMINESCENCE OF IN-0.49(ALYGA1-Y)(0.51)P ALLOYS NEAR THE DIRECT-INDIRECT BAND-GAP CROSSOVER, Physical review. B, Condensed matter, 53(23), 1996, pp. 15893-15901
WAVELENGTH-DEPENDENT OPTIMUM OUTPUT COUPLING ENHANCES PERFORMANCE OF EXTERNAL-CAVITY-TUNED SEMICONDUCTOR-LASERS AT 1.5-MU-M
Authors: FOUQUET JE BRAUN DM TROTT GR
Citation: Je. Fouquet et al., WAVELENGTH-DEPENDENT OPTIMUM OUTPUT COUPLING ENHANCES PERFORMANCE OF EXTERNAL-CAVITY-TUNED SEMICONDUCTOR-LASERS AT 1.5-MU-M, IEEE journal of quantum electronics, 32(10), 1996, pp. 1777-1781
OPTICAL DIAGNOSTICS OF SEMICONDUCTORS
Authors: FOUQUET JE MERZ JL
Citation: Je. Fouquet et Jl. Merz, OPTICAL DIAGNOSTICS OF SEMICONDUCTORS, IEEE journal of selected topics in quantum electronics, 1(4), 1995, pp. 977-979
THE GROWTH AND CHARACTERIZATION OF ALGAAS DOUBLE HETEROSTRUCTURES FORTHE EVALUATION OF REACTOR AND SOURCE QUALITY
Authors: ISLAM MR CHELAKARA RV NEFF JG FERTITTA KG GRUDOWSKI PA HOLMES AL CIUBA FJ DUPUIS RD FOUQUET JE
Citation: Mr. Islam et al., THE GROWTH AND CHARACTERIZATION OF ALGAAS DOUBLE HETEROSTRUCTURES FORTHE EVALUATION OF REACTOR AND SOURCE QUALITY, Journal of electronic materials, 24(6), 1995, pp. 787-792
HIGH-POWER SEMICONDUCTOR EDGE-EMITTING LIGHT-EMITTING-DIODES FOR OPTICAL LOW-COHERENCE REFLECTOMETRY
Authors: FOUQUET JE TROTT GR SORIN WV LUDOWISE MJ BRAUN DM
Citation: Je. Fouquet et al., HIGH-POWER SEMICONDUCTOR EDGE-EMITTING LIGHT-EMITTING-DIODES FOR OPTICAL LOW-COHERENCE REFLECTOMETRY, IEEE journal of quantum electronics, 31(8), 1995, pp. 1494-1503
HIGH-POWER, LOW-INTERNAL-REFLECTION, EDGE EMITTING LIGHT-EMITTING-DIODES
Authors: DERICKSON DJ BECK PA BAGWELL TL BRAUN DM FOUQUET JE KELLERT FG LUDOWISE MJ PEREZ WH RANGANATH TR TROTT GR SLOAN SR
Citation: Dj. Derickson et al., HIGH-POWER, LOW-INTERNAL-REFLECTION, EDGE EMITTING LIGHT-EMITTING-DIODES, HEWLETT-PAC, 46(1), 1995, pp. 43-48
EPITAXIAL LINBO3 THIN-FILMS ON SAPPHIRE SUBSTRATES GROWN BY SOLID SOURCE MOCVD
Authors: LU Z HISKES R DICAROLIS SA ROUTE RK FEIGELSON RS LEPLINGARD F FOUQUET JE
Citation: Z. Lu et al., EPITAXIAL LINBO3 THIN-FILMS ON SAPPHIRE SUBSTRATES GROWN BY SOLID SOURCE MOCVD, Journal of materials research, 9(9), 1994, pp. 2258-2263
EXTREMELY LOW-BACK FACET FEEDBACK BY QUANTUM-CONFINED STARK-EFFECT ABSORPTION IN AN EDGE-EMITTING LIGHT-EMITTING DIODE
Authors: FOUQUET JE SORIN WV TROTT GR LUDOWISE MJ BRAUN DM
Citation: Je. Fouquet et al., EXTREMELY LOW-BACK FACET FEEDBACK BY QUANTUM-CONFINED STARK-EFFECT ABSORPTION IN AN EDGE-EMITTING LIGHT-EMITTING DIODE, IEEE photonics technology letters, 5(5), 1993, pp. 509-511
PHOTOLUMINESCENCE EXCITATION SPECTROSCOPY YIELDS BAND-GAP OF GA0.5IN0.5P CONTAINING RELATIVELY ORDERED DOMAINS
Authors: FOUQUET JE MINSKY MS ROSNER SJ
Citation: Je. Fouquet et al., PHOTOLUMINESCENCE EXCITATION SPECTROSCOPY YIELDS BAND-GAP OF GA0.5IN0.5P CONTAINING RELATIVELY ORDERED DOMAINS, Applied physics letters, 63(23), 1993, pp. 3212-3214
Risultati: 1-10 |