Citation: H. Happy et al., NUMERICAL-ANALYSIS OF DEVICE PERFORMANCE OF METAMORPHIC INYAL1-YAS INXGA1-XAS LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.6) HEMTS ON GAAS SUBSTRATE/, I.E.E.E. transactions on electron devices, 45(10), 1998, pp. 2089-2095