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Results:
1-13
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Results: 13
Authors:
ALAGNA L
PROSPERI T
TURCHINI S
FERRARI C
FRANCESIO L
FRANZOSI P
Citation: L. Alagna et al., DIFFRACTION ANOMALOUS NEAR-EDGE STRUCTURE IN ORDERED GAINP, Journal of applied physics, 83(7), 1998, pp. 3552-3555
Authors:
FERRARI C
FRANCESIO L
FRANZOSI P
GENNARI S
Citation: C. Ferrari et al., HIGH-RESOLUTION X-RAY-DIFFRACTION STUDY OF HIGHLY MISMATCHED III-V HETEROSTRUCTURES BY ANALYSIS OF THE LAYER BRAGG PEAK WIDTH, Nuovo cimento della Societa italiana di fisica. D, Condensed matter,atomic, molecular and chemical physics, biophysics, 19(2-4), 1997, pp. 277-284
Authors:
KORYTAR D
BOHACEK P
BESSE I
FRANCESIO L
MIKULA P
Citation: D. Korytar et al., MONOLITHIC DEVICES FOR HIGH-RESOLUTION X-RAY-DIFFRACTOMETRY AND TOPOGRAPHY, Nuovo cimento della Societa italiana di fisica. D, Condensed matter,atomic, molecular and chemical physics, biophysics, 19(2-4), 1997, pp. 481-488
Authors:
FRANCESIO L
ALAGNA L
CAPELLE B
FERRARI C
FRANZOSI P
SAUVAGE M
Citation: L. Francesio et al., X-RAY-DIFFRACTION STUDY ON THE CORRELATION BETWEEN ORDERED DOMAINS SIZE AND ORDERING DEGREE IN INGAP GAAS ALLOY LAYERS/, Nuovo cimento della Societa italiana di fisica. D, Condensed matter,atomic, molecular and chemical physics, biophysics, 19(2-4), 1997, pp. 537-543
Authors:
FRANCESIO L
FRANZOSI P
CALDIRONI M
VITALI L
DELLAGIOVANNA M
DIPAOLA A
VIDIMARI F
PELLEGRINO S
Citation: L. Francesio et al., ORDERING EFFECTS IN INGAP GAAS AND INGAASP/GAAS HETEROSTRUCTURES GROWN BY LP-MOVPE/, Nuovo cimento della Societa italiana di fisica. D, Condensed matter,atomic, molecular and chemical physics, biophysics, 18(8), 1996, pp. 975-983
Authors:
FRANCESIO L
FRANZOSI P
ATTOLINI G
PELOSI C
Citation: L. Francesio et al., LATTICE STRAIN RELAXATION IN GAAS INP(001) AND GAAS/GAP(001) HETEROSTRUCTURES/, Solid state communications, 97(9), 1996, pp. 781-783
Authors:
FERRARI C
FRANCESIO L
FRANZOSI P
GENNARI S
Citation: C. Ferrari et al., HIGH-RESOLUTION X-RAY-DIFFRACTION STUDY OF THE BRAGG PEAK WIDTH IN HIGHLY MISMATCHED ILL-V HETEROSTRUCTURES, Applied physics letters, 69(27), 1996, pp. 4233-4235
Authors:
ROMANATO F
DRIGO AV
FRANCESIO L
FRANZOSI P
LAZZARINI L
SALVIATI G
MAZZER M
BRUNI MR
SIMEONE MG
Citation: F. Romanato et al., INVESTIGATION OF STRAIN RELAXATION MECHANISMS IN INGAAS GAAS SINGLE-LAYER FILMS/, Microscopy microanalysis microstructures, 6(5-6), 1995, pp. 491-498
Authors:
AMIOTTI M
GUIZZETTI G
PATRINI M
FRANCESIO L
FRANZOSI P
MATTEI G
LANDGREN G
Citation: M. Amiotti et al., INVESTIGATION OF GAINAS INP SUPERLATTICES BY ELECTRON-MICROSCOPY, X-RAY-DIFFRACTION AND SPECTROSCOPIC ELLIPSOMETRY/, Semiconductor science and technology, 10(4), 1995, pp. 492-499
Authors:
FRANCESIO L
FRANZOSI P
LANDGREN G
Citation: L. Francesio et al., A HIGH-RESOLUTION X-RAY-DIFFRACTION STUDY IN INGAAS INP SUPERLATTICES/, Journal of physics. D, Applied physics, 28(4A), 1995, pp. 169-171
Authors:
FRANCESIO L
FRANZOSI P
CALDIRONI M
VITALI L
DELLAGIOVANNA M
DIPAOLA A
VIDIMARI E
PELLEGRINO S
Citation: L. Francesio et al., INVESTIGATION OF THE CATIONIC ORDERING IN INGAP GAAS EPILAYERS GROWN BY LOW-PRESSURE, METAL-ORGANIC VAPOR-PHASE EPITAXY/, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 219-223
Authors:
ATTOLINI G
FRANCESIO L
FRANZOSI P
PELOSI C
GENNARI S
LOTTICI PP
Citation: G. Attolini et al., RAMAN-SCATTERING STUDY OF RESIDUAL STRAIN IN GAAS INP HETEROSTRUCTURES/, Journal of applied physics, 75(8), 1994, pp. 4156-4160
Authors:
ANTOLINI A
FRANCESIO L
GASTALDI L
GENOVA F
LAMBERTI C
LAZZARINI L
PAPUZZA C
RIGO C
SALVIATI G
Citation: A. Antolini et al., THE EFFECTS OF ROUGHNESS AND COMPOSITION VARIATION AT THE INP INGAAS AND INGAAS/INP INTERFACES ON CBE GROWN QUANTUM-WELLS/, Journal of crystal growth, 127(1-4), 1993, pp. 189-193
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