THE EFFECTS OF ROUGHNESS AND COMPOSITION VARIATION AT THE INP INGAAS AND INGAAS/INP INTERFACES ON CBE GROWN QUANTUM-WELLS/

Authors
ANTOLINI A FRANCESIO L GASTALDI L GENOVA F LAMBERTI C LAZZARINI L PAPUZZA C RIGO C SALVIATI G
Citation
A. Antolini et al., THE EFFECTS OF ROUGHNESS AND COMPOSITION VARIATION AT THE INP INGAAS AND INGAAS/INP INTERFACES ON CBE GROWN QUANTUM-WELLS/, Journal of crystal growth, 127(1-4), 1993, pp. 189-193
Citations number
9
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
127
Issue
1-4
Year of publication
1993
Pages
189 - 193
Database
ISI
SICI code
0022-0248(1993)127:1-4<189:TEORAC>2.0.ZU;2-7
Abstract
Quantum wells of the InGaAs/InP system grown with CBE and MOVPE techni ques show compositional changes at the heterointerfaces. The interface layers (strained on the InP substrate) modify the energy profile of t he well and the strain can be the cause of deviations from the simple layer-by-layer growth mechanism. Using FTPL, HREM and HRXRD characteri zation techniques, we will discuss the results of a model for the pred iction of the InP/InGaAs/InP interface composition of CBE structures. The role of the growth interruption in order to obtain highly uniform QWs will be clearly emphasized.