AAAAAA
Results:
1-7
|
Results: 7
Authors:
GOTTSCHALCH V
FRANZHELD R
PIETZONKA I
SCHWABE R
BENNDORF G
WAGNER G
Citation: V. Gottschalch et al., MOVPE GROWTH OF SPONTANEOUSLY ORDERED (GAIN) AND (ALIN)P LAYERS LATTICE-MATCHED TO GAAS SUBSTRATES, Crystal research and technology, 32(1), 1997, pp. 69-82
Authors:
KIRPAL G
GERHARDT M
BENNDORF G
SCHWABE R
PIETAG F
PIETZONKA I
LIPPOLD G
WAGNER G
FRANZHELD R
GOTTSCHALCH V
Citation: G. Kirpal et al., MOVPE GROWTH AND CHARACTERIZATION OF GAINAS(P) ON (001)INP USING DIETHYLTERTIARYBUTYLARSINE (DETBAS) AND TERTIARYBUTYLPHOSPHINE (TBP) AS THE GROUP-V SOURCES, Journal of crystal growth, 170(1-4), 1997, pp. 167-172
Authors:
PIETZONKA I
HIRSCH D
GOTTSCHALCH V
SCHWABE R
FRANZHELD R
BENTE K
BIGL F
Citation: I. Pietzonka et al., ATOMIC-FORCE MICROSCOPY ON (001) SURFACES OF GAAS MOVPE LAYERS, CHEMICAL VAPOR DEPOSITION, 2(2), 1996, pp. 44-48
Authors:
ROSSETTO G
FRANZHELD R
CAMPORESE A
FAVARO ML
TORZO G
AJO D
ZANELLA P
Citation: G. Rossetto et al., A NEW PRECURSOR FOR EPITAXIAL-GROWTH OF INDIUM BASED SEMICONDUCTORS, Journal of crystal growth, 146(1-4), 1995, pp. 511-514
Authors:
SCHWABE R
PIETAG F
FAULKNER M
LASSEN S
GOTTSCHALCH V
FRANZHELD R
BITZ A
STAEHLI JL
Citation: R. Schwabe et al., OPTICAL INVESTIGATIONS ON ISOVALENT DELTA-LAYERS IN III-V SEMICONDUCTOR COMPOUNDS, Journal of applied physics, 77(12), 1995, pp. 6295-6299
Authors:
WAGNER G
GOTTSCHALCH V
FRANZHELD R
KRIEGEL S
PAUFLER P
Citation: G. Wagner et al., DISLOCATIONS, TWINS, AND CRACKS IN IN1-XGAXP (001)GAAS HETEROEPITAXIAL LAYERS/, Physica status solidi. a, Applied research, 146(1), 1994, pp. 371-383
Authors:
CHASSE T
FRANKE R
URBAN C
FRANZHELD R
STREUBEL P
MEISEL A
Citation: T. Chasse et al., X-RAY PHOTOELECTRON SPECTROSCOPIC CORE-LEVEL SHIFTS OF PHOSPHORUS IN PHOSPHATES AND NATIVE OXIDE LAYERS ON INP(100) - APPLICATIONS OF THE AUGER PARAMETER CONCEPT, Journal of electron spectroscopy and related phenomena, 62(3), 1993, pp. 287-308
Risultati:
1-7
|