MOVPE GROWTH AND CHARACTERIZATION OF GAINAS(P) ON (001)INP USING DIETHYLTERTIARYBUTYLARSINE (DETBAS) AND TERTIARYBUTYLPHOSPHINE (TBP) AS THE GROUP-V SOURCES

We report on low pressure MOVPE results of (GaIn)As grown with the ars enic precursor DEtBAs as well as (GaIn)(AsP) grown on InP using the pr ecursor combinations DEtBAs/TBP, DEtBAs/PH3 which we carefully compare d with samples grown in the standard system (AsH3/PH3). Lattice matche d (GaIn)As layers have been obtained at a growth temperature of 600 de grees C, a V/III ratio of 3 and at a growth rate of 1 mu m/h at a reac tor pressure of 50 mbar. Changing the As precursor from AsH3 to DEtBAs simultaneously alters the incorporation coefficient ratio k(Ga)/k(In) from 1.15 to 1. At room temperature n-type mobilities of 9060 cm(2)/V a have been achieved for (GaIn)As grown with DEtBAs at a V/III ratio of 2. Besides the excitonic luminescence at 802 meV a lower energy pea k appears in the photoluminescence (PL) spectra at 753 meV (carbon-car bon donor-acceptor pair). The excitonic luminescence peak has a FWHM o f about 9 meV. The (GaIn)(AsP) layers have been grown at a growth temp erature of 625 degrees C and V/III ratios of 15-25 with DEtBAs/TBP and about 60 with DEtBAs/PH3. Layers grown with higher V/III ratios show an enhanced As content. However, considering the P incorporation we ha ve observed a qualitative difference between the standard hydride syst em and systems using alternative group-V precursors. Even in the syste m DEtBAs/PH3 the phosphorus incorporation is much higher than in the A sH3/PH3 system indicating the influence of vapor phase exchange reacti ons.