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Results: 1-25 | 26-42
Results: 1-25/42
IDENTIFICATION OF INDIVIDUAL AND ALIGNED MICRODEFECTS IN BULK VERTICAL BRIDGMAN-GROWN AND LIQUID ENCAPSULATED CZOCHRALSKI-GROWN GAAS
Authors: WEYHER JL SCHOBER T SONNENBERG K FRANZOSI P
Citation: Jl. Weyher et al., IDENTIFICATION OF INDIVIDUAL AND ALIGNED MICRODEFECTS IN BULK VERTICAL BRIDGMAN-GROWN AND LIQUID ENCAPSULATED CZOCHRALSKI-GROWN GAAS, Materials science & engineering. B, Solid-state materials for advanced technology, 55(1-2), 1998, pp. 79-85
DIFFRACTION ANOMALOUS NEAR-EDGE STRUCTURE IN ORDERED GAINP
Authors: ALAGNA L PROSPERI T TURCHINI S FERRARI C FRANCESIO L FRANZOSI P
Citation: L. Alagna et al., DIFFRACTION ANOMALOUS NEAR-EDGE STRUCTURE IN ORDERED GAINP, Journal of applied physics, 83(7), 1998, pp. 3552-3555
COMPARATIVE-STUDY OF MICRODEFECTS IN DISLOCATION-FREE, HEAVILY SI DOPED VB GAAS BY DSL ETCHING, NIR PHASE-CONTRAST MICROSCOPY, TEM AND X-RAY DIFFUSE-SCATTERING
Authors: WEYHER JL SONNENBERG K SCHOBER T RUCKI A JAGER W FRANZOSI P FRIGERI C
Citation: Jl. Weyher et al., COMPARATIVE-STUDY OF MICRODEFECTS IN DISLOCATION-FREE, HEAVILY SI DOPED VB GAAS BY DSL ETCHING, NIR PHASE-CONTRAST MICROSCOPY, TEM AND X-RAY DIFFUSE-SCATTERING, Materials science & engineering. B, Solid-state materials for advanced technology, 44(1-3), 1997, pp. 242-247
HIGH-RESOLUTION X-RAY-DIFFRACTION STUDY OF HIGHLY MISMATCHED III-V HETEROSTRUCTURES BY ANALYSIS OF THE LAYER BRAGG PEAK WIDTH
Authors: FERRARI C FRANCESIO L FRANZOSI P GENNARI S
Citation: C. Ferrari et al., HIGH-RESOLUTION X-RAY-DIFFRACTION STUDY OF HIGHLY MISMATCHED III-V HETEROSTRUCTURES BY ANALYSIS OF THE LAYER BRAGG PEAK WIDTH, Nuovo cimento della Societa italiana di fisica. D, Condensed matter,atomic, molecular and chemical physics, biophysics, 19(2-4), 1997, pp. 277-284
X-RAY-DIFFRACTION STUDY ON THE CORRELATION BETWEEN ORDERED DOMAINS SIZE AND ORDERING DEGREE IN INGAP GAAS ALLOY LAYERS/
Authors: FRANCESIO L ALAGNA L CAPELLE B FERRARI C FRANZOSI P SAUVAGE M
Citation: L. Francesio et al., X-RAY-DIFFRACTION STUDY ON THE CORRELATION BETWEEN ORDERED DOMAINS SIZE AND ORDERING DEGREE IN INGAP GAAS ALLOY LAYERS/, Nuovo cimento della Societa italiana di fisica. D, Condensed matter,atomic, molecular and chemical physics, biophysics, 19(2-4), 1997, pp. 537-543
X-RAY STANDING-WAVE TECHNIQUE AS A SOURCE OF COMPLEMENTARY INFORMATION IN STRUCTURAL CHARACTERIZATION OF THIN SURFACE-LAYERS
Authors: BOCCHI C FRANZOSI P IMAMOV RM MASLOV AV MUKHAMEDZHANOV EK PASHAEV EM
Citation: C. Bocchi et al., X-RAY STANDING-WAVE TECHNIQUE AS A SOURCE OF COMPLEMENTARY INFORMATION IN STRUCTURAL CHARACTERIZATION OF THIN SURFACE-LAYERS, Nuovo cimento della Societa italiana di fisica. D, Condensed matter,atomic, molecular and chemical physics, biophysics, 19(1), 1997, pp. 65-72
STRUCTURAL-PROPERTIES OF ZN-DIFFUSED INP LAYERS
Authors: BOCCHI C FRANZOSI P PELOSI C MASLOV AV MUKHAMEDZHANOV EK GAMBACORTI N SIMEONE MG AUDINO R
Citation: C. Bocchi et al., STRUCTURAL-PROPERTIES OF ZN-DIFFUSED INP LAYERS, Journal of applied physics, 82(11), 1997, pp. 5416-5421
ORDERING EFFECTS IN INGAP GAAS AND INGAASP/GAAS HETEROSTRUCTURES GROWN BY LP-MOVPE/
Authors: FRANCESIO L FRANZOSI P CALDIRONI M VITALI L DELLAGIOVANNA M DIPAOLA A VIDIMARI F PELLEGRINO S
Citation: L. Francesio et al., ORDERING EFFECTS IN INGAP GAAS AND INGAASP/GAAS HETEROSTRUCTURES GROWN BY LP-MOVPE/, Nuovo cimento della Societa italiana di fisica. D, Condensed matter,atomic, molecular and chemical physics, biophysics, 18(8), 1996, pp. 975-983
STRUCTURAL-PROPERTIES OF HG1-XMNXTE LAYERS GROWN ON CDTE SUBSTRATES BY LIQUID-PHASE EPITAXY
Authors: SOCHINSKII NV SOARES JC ALVES E DASILVA MF FRANZOSI P DIEGUEZ E
Citation: Nv. Sochinskii et al., STRUCTURAL-PROPERTIES OF HG1-XMNXTE LAYERS GROWN ON CDTE SUBSTRATES BY LIQUID-PHASE EPITAXY, Semiconductor science and technology, 11(4), 1996, pp. 542-547
X-RAY TOPOGRAPHIC ASSESSMENT OF DEFECTS IN PURE AND SUBSTITUTED HEXAFERRITE CRYSTALS
Authors: RAINA U BHAT S KOTRU PN FRANZOSI P LICCI F
Citation: U. Raina et al., X-RAY TOPOGRAPHIC ASSESSMENT OF DEFECTS IN PURE AND SUBSTITUTED HEXAFERRITE CRYSTALS, Crystal research and technology, 31(6), 1996, pp. 783-788
LATTICE STRAIN RELAXATION IN GAAS INP(001) AND GAAS/GAP(001) HETEROSTRUCTURES/
Authors: FRANCESIO L FRANZOSI P ATTOLINI G PELOSI C
Citation: L. Francesio et al., LATTICE STRAIN RELAXATION IN GAAS INP(001) AND GAAS/GAP(001) HETEROSTRUCTURES/, Solid state communications, 97(9), 1996, pp. 781-783
SOLUTION CRYSTAL-GROWTH OF UREA AND DERIVATIVES FOR NONLINEAR-OPTICALAPPLICATIONS
Authors: ZENG L ZHA M ARDOINO M FRANZOSI P ZANOTTI L ZUCCALLI G PAORICI C
Citation: L. Zeng et al., SOLUTION CRYSTAL-GROWTH OF UREA AND DERIVATIVES FOR NONLINEAR-OPTICALAPPLICATIONS, Journal of crystal growth, 166(1-4), 1996, pp. 528-532
DETERMINATION OF LATTICE-PARAMETERS IN THE EPITAXIAL ALSB GASB SYSTEMBY HIGH-RESOLUTION X-RAY-DIFFRACTION/
Authors: BOCCHI C BOSACCHI A FERRARI C FRANCHI S FRANZOSI P MAGNANINI R NASI L
Citation: C. Bocchi et al., DETERMINATION OF LATTICE-PARAMETERS IN THE EPITAXIAL ALSB GASB SYSTEMBY HIGH-RESOLUTION X-RAY-DIFFRACTION/, Journal of crystal growth, 165(1-2), 1996, pp. 8-14
STRUCTURAL-PROPERTIES OF CDTE AND HG1-XCDXTE EPITAXIAL LAYERS GROWN ON SAPPHIRE SUBSTRATES
Authors: SOCHINSKII NV SOARES JC ALVES E DASILVA MF FRANZOSI P BERNARDI S DIEGUEZ E
Citation: Nv. Sochinskii et al., STRUCTURAL-PROPERTIES OF CDTE AND HG1-XCDXTE EPITAXIAL LAYERS GROWN ON SAPPHIRE SUBSTRATES, Journal of crystal growth, 161(1-4), 1996, pp. 195-200
DOPANT-INDUCED LATTICE DILATION IN N-TYPE INP HOMOEPITAXIAL LAYERS
Authors: FERRARI C FRANZOSI P
Citation: C. Ferrari et P. Franzosi, DOPANT-INDUCED LATTICE DILATION IN N-TYPE INP HOMOEPITAXIAL LAYERS, Journal of applied physics, 79(9), 1996, pp. 6890-6894
MORPHOLOGICAL CHARACTERIZATION AND STRAIN RELEASE OF GAAS INAS(001) HETEROSTRUCTURES/
Authors: ATTOLINI G CHIMENTI E FRANZOSI P GENNARI S PELOSI C LOTTICI PP
Citation: G. Attolini et al., MORPHOLOGICAL CHARACTERIZATION AND STRAIN RELEASE OF GAAS INAS(001) HETEROSTRUCTURES/, Applied physics letters, 69(7), 1996, pp. 957-959
HIGH-RESOLUTION X-RAY-DIFFRACTION STUDY OF THE BRAGG PEAK WIDTH IN HIGHLY MISMATCHED ILL-V HETEROSTRUCTURES
Authors: FERRARI C FRANCESIO L FRANZOSI P GENNARI S
Citation: C. Ferrari et al., HIGH-RESOLUTION X-RAY-DIFFRACTION STUDY OF THE BRAGG PEAK WIDTH IN HIGHLY MISMATCHED ILL-V HETEROSTRUCTURES, Applied physics letters, 69(27), 1996, pp. 4233-4235
STRUCTURAL CHARACTERIZATION OF ZN-DIFFUSED INP LAYERS BY X-RAY-DIFFRACTION AND STANDING-WAVES METHOD
Authors: BOCCHI C FRANZOSI P MASLOV AV MUKHAMEDZHANOV EK AUDINO R GAMBACORTI N
Citation: C. Bocchi et al., STRUCTURAL CHARACTERIZATION OF ZN-DIFFUSED INP LAYERS BY X-RAY-DIFFRACTION AND STANDING-WAVES METHOD, Applied physics letters, 69(20), 1996, pp. 3019-3021
INVESTIGATION OF STRAIN RELAXATION MECHANISMS IN INGAAS GAAS SINGLE-LAYER FILMS/
Authors: ROMANATO F DRIGO AV FRANCESIO L FRANZOSI P LAZZARINI L SALVIATI G MAZZER M BRUNI MR SIMEONE MG
Citation: F. Romanato et al., INVESTIGATION OF STRAIN RELAXATION MECHANISMS IN INGAAS GAAS SINGLE-LAYER FILMS/, Microscopy microanalysis microstructures, 6(5-6), 1995, pp. 491-498
THE ROLE OF THE V III RATIO IN THE GROWTH AND STRUCTURAL-PROPERTIES OF METALORGANIC VAPOR-PHASE EPITAXY GAAS/GE HETEROSTRUCTURES/
Authors: PELOSI C ATTOLINI G BOCCHI C FRANZOSI P FRIGERI C BERTI M DRIGO AV ROMANATO F
Citation: C. Pelosi et al., THE ROLE OF THE V III RATIO IN THE GROWTH AND STRUCTURAL-PROPERTIES OF METALORGANIC VAPOR-PHASE EPITAXY GAAS/GE HETEROSTRUCTURES/, Journal of electronic materials, 24(11), 1995, pp. 1723-1730
INVESTIGATION OF GAINAS INP SUPERLATTICES BY ELECTRON-MICROSCOPY, X-RAY-DIFFRACTION AND SPECTROSCOPIC ELLIPSOMETRY/
Authors: AMIOTTI M GUIZZETTI G PATRINI M FRANCESIO L FRANZOSI P MATTEI G LANDGREN G
Citation: M. Amiotti et al., INVESTIGATION OF GAINAS INP SUPERLATTICES BY ELECTRON-MICROSCOPY, X-RAY-DIFFRACTION AND SPECTROSCOPIC ELLIPSOMETRY/, Semiconductor science and technology, 10(4), 1995, pp. 492-499
AN X-RAY-DIFFRACTION STUDY OF THE LATTICE STRAIN RELAXATION IN MOVPE GAAS GE HETEROSTRUCTURES/
Authors: ATTOLINI G BOCCHI C FRANZOSI P KORYTAR D PELOSI C
Citation: G. Attolini et al., AN X-RAY-DIFFRACTION STUDY OF THE LATTICE STRAIN RELAXATION IN MOVPE GAAS GE HETEROSTRUCTURES/, Journal of physics. D, Applied physics, 28(4A), 1995, pp. 129-132
A HIGH-RESOLUTION X-RAY-DIFFRACTION STUDY IN INGAAS INP SUPERLATTICES/
Authors: FRANCESIO L FRANZOSI P LANDGREN G
Citation: L. Francesio et al., A HIGH-RESOLUTION X-RAY-DIFFRACTION STUDY IN INGAAS INP SUPERLATTICES/, Journal of physics. D, Applied physics, 28(4A), 1995, pp. 169-171
VAPOR-PHASE EPITAXY OF HG1-XCDXTE ON CDTE HETEROEPITAXIAL SUBSTRATES
Authors: SOCHINSKII NV BERNARDI S DIEGUEZ E FRANZOSI P KLETSKII SV
Citation: Nv. Sochinskii et al., VAPOR-PHASE EPITAXY OF HG1-XCDXTE ON CDTE HETEROEPITAXIAL SUBSTRATES, Journal of crystal growth, 149(1-2), 1995, pp. 35-44
CRYSTAL-GROWTH AND CHARACTERIZATION OF UREA BY PHYSICAL VAPOR TRANSPORT IN SEMIOPEN CELLS
Authors: ZHA M FRANZOSI P ZANOTTI L ZUCCALLI G PAORICI C CAPELLETTI R RAZZETTI C
Citation: M. Zha et al., CRYSTAL-GROWTH AND CHARACTERIZATION OF UREA BY PHYSICAL VAPOR TRANSPORT IN SEMIOPEN CELLS, Journal of crystal growth, 146(1-4), 1995, pp. 29-36
Risultati: 1-25 | 26-42