AAAAAA
Results:
1-14
|
Results: 14
Authors:
PAN N
ELLIOTT J
KNOWLES M
VU DP
KISHIMOTO K
TWYNAM JK
SATO H
FRESINA MT
STILLMAN GE
Citation: N. Pan et al., HIGH-RELIABILITY INGAP GAAS HBT, IEEE electron device letters, 19(4), 1998, pp. 115-117
Authors:
AHMARI DA
FRESINA MT
HARTMANN QJ
BARLAGE DW
FENG M
STILLMAN GE
Citation: Da. Ahmari et al., INGAP GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR GROWN ON A SEMIINSULATING INGAP BUFFER LAYER/, IEEE electron device letters, 18(11), 1997, pp. 559-561
Authors:
HARTMANN QJ
GARDNER NF
HORTON TU
CURTIS AP
AHMARI DA
FRESINA MT
BAKER JE
STILLMAN GE
Citation: Qj. Hartmann et al., SEMIINSULATING IN0.49GA0.51P GROWN AT REDUCED SUBSTRATE-TEMPERATURE BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION, Applied physics letters, 70(14), 1997, pp. 1822-1824
Authors:
AHMARI DA
FRESINA MT
HARTMANN QJ
BARLAGE DW
MARES PJ
FENG M
STILLMAN GE
Citation: Da. Ahmari et al., HIGH-SPEED INGAP GAAS HBTS WITH A STRAINED INXGA1-XAS BASE/, IEEE electron device letters, 17(5), 1996, pp. 226-228
Authors:
FRESINA MT
HARTMANN QJ
STILLMAN GE
Citation: Mt. Fresina et al., SELECTIVE SELF-ALIGNED EMITTER LEDGE FORMATION FOR HETEROJUNCTION BIPOLAR-TRANSISTORS, IEEE electron device letters, 17(12), 1996, pp. 555-556
Authors:
FRESINA MT
AHMARI DA
THOMAS S
BARLAGE DW
MARTINO CA
FENG M
STILLMAN GE
Citation: Mt. Fresina et al., HIGH-SPEED INP INGAAS HETEROJUNCTION BIPOLAR-TRANSISTOR UTILIZING NONALLOYED CONTACTS ON N(+)-INP CONTACTING LAYERS/, Journal of electronic materials, 25(10), 1996, pp. 1637-1639
Authors:
HARTMANN QJ
HWANGBO H
YUNG A
AHMARI DA
FRESINA MT
BAKER JE
STILLMAN GE
Citation: Qj. Hartmann et al., REMOVAL OF HYDROGEN FROM THE BASE OF CARBON-DOPED IN0.49GA0.51P GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS BY EX-SITU ANNEALING AND THE EFFECTS ON DEVICE CHARACTERISTICS/, Applied physics letters, 68(7), 1996, pp. 982-984
Authors:
FRESINA MT
AHMARI DA
MARES PJ
HARTMANN QJ
FENG M
STILLMAN GE
Citation: Mt. Fresina et al., HIGH-SPEED, LOW-NOISE INGAP GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS/, IEEE electron device letters, 16(12), 1995, pp. 540-541
Authors:
HARTMANN QJ
FRESINA MT
AHMARI DA
STILLMAN GE
Citation: Qj. Hartmann et al., EFFECT OF COLLECTOR DESIGN ON THE DC CHARACTERISTICS OF IN0.49GA0.51PGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS/, Solid-state electronics, 38(12), 1995, pp. 2017-2021
Authors:
FRESINA MT
HARTMANN QJ
AHMARI DA
GARDNER NF
STILLMAN GE
Citation: Mt. Fresina et al., ANALYSIS OF THE OFFSET VOLTAGE OF INGAP GAAS SINGLE, DOUBLE, AND COMPOSITE DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS/, Journal of applied physics, 77(10), 1995, pp. 5437-5439
Authors:
STOCKMAN SA
HANSON AW
COLOMB CM
FRESINA MT
BAKER JE
STILLMAN GE
Citation: Sa. Stockman et al., A COMPARISON OF TMGA AND TEGA FOR LOW-TEMPERATURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION GROWTH OF CCL4-DOPED INGAAS, Journal of electronic materials, 23(8), 1994, pp. 791-799
Authors:
STOCKMAN SA
FRESINA MT
HARTMANN QJ
HANSON AW
GARDNER NF
BAKER JE
STILLMAN GE
Citation: Sa. Stockman et al., CARBON INCORPORATION IN INP GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION AND APPLICATION TO INP INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS/, Journal of applied physics, 75(8), 1994, pp. 4233-4236
Authors:
FRESINA MT
JACKSON SL
STILLMAN GE
Citation: Mt. Fresina et al., INP INGAAS HBTS WITH N(+)-INP CONTACTING LAYERS GROWN BY MOMBE USING SIBR4/, Electronics Letters, 30(25), 1994, pp. 2177-2178
Authors:
JACKSON SL
FRESINA MT
BAKER JE
STILLMAN GE
Citation: Sl. Jackson et al., HIGH-EFFICIENCY SILICON DOPING OF INP AND IN0.53GA0.47AS IN GAS-SOURCE AND METALORGANIC MOLECULAR-BEAM EPITAXY USING SILICON TETRABROMIDE, Applied physics letters, 64(21), 1994, pp. 2867-2869
Risultati:
1-14
|